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Erschienen in:
2014 | OriginalPaper | Buchkapitel
On the Determination of Electron Effective Mass in 2DEGs in Gallium Nitride HEMT Structures
verfasst von : Manna Kumari Mishra, Rachna Manchanda, Sushil Lamba, O. P. Thakur, R. K. Sharma, R. Muralidharan
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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Temperature dependence of the Shubnikov de Haas oscillation observed in the temperature range of 1.8–6 K due to doubly occupied subbands in the two-dimensional electron gas (2DEG) in AlGaN/GaN HEMT structures grown by MBE inhouse has been used to determine the effective mass m* using a novel method of nonlinear curve fitting method which is assigned to be more accurate which is reflected by the R-squared value of the fitting than discussed by previous workers using conventional approximation in linear-curve fitting model. Also the range in which the approximation of the conventional method is valid has been found out.