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Erschienen in: Journal of Sol-Gel Science and Technology 3/2018

04.05.2018 | Original Paper: Nano-structured materials (particles, fibers, colloids, composites, etc.)

One pot low temperature synthesis of graphene coupled Gd-doped ZnFe2O4 nanocomposite for effective removal of antibiotic levofloxacin drug

verfasst von: Atanu Naskar, Hasmat Khan, Sunirmal Jana

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 3/2018

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Abstract

Nanocomposites of reduced graphene oxide (rGO) coupled gadolinium doped ZnFe2O4 (GZFG) have been successfully one pot in-situ synthesized adopting low temperature solution process from zinc nitrate, iron nitrate, gadolinium acetate and graphene oxide with varying concentrations of gadolinium (upto 10% Gd with respect to Zn) in the precursor medium. X-ray diffraction and transmission electron microscopy studies confirm the presence of single phase cubic spinel structure of ZnFe2O4 that uniformly distributed over the rGO layers. With increasing Gd doping concentration in precursor medium, the average crystallite size of ZnFe2O4 diminishes gradually from ~11 to ~5.5 nm. Raman and X-ray photoelectron spectral analyses confirm an existence of interaction between rGO and ZnFe2O4 in GZFG samples. Using antibiotic levofloxacin in water, the drug removal capacity (DRC) of GZFG has been performed by optimization of parameters such as gadolinium doping concentration in precursor medium, solution pH, etc. However, the gadolinium doping leads to an improvement in DRC of the nanocomposite and the 5% Gd doped sample shows about 86% DRC at the optimized condition. This simple strategy can be utilized in the synthesis of rGO coupled Gd doped other metal oxide nanocomposites for DRC application.

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Metadaten
Titel
One pot low temperature synthesis of graphene coupled Gd-doped ZnFe2O4 nanocomposite for effective removal of antibiotic levofloxacin drug
verfasst von
Atanu Naskar
Hasmat Khan
Sunirmal Jana
Publikationsdatum
04.05.2018
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 3/2018
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-018-4668-0

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