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2007 | OriginalPaper | Buchkapitel

Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs

verfasst von: M. -A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen

Erschienen in: Simulation of Semiconductor Processes and Devices 2007

Verlag: Springer Vienna

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We present a comparison between two-different approaches to including quantum effects in a Monte-Carlo simulator. The ability of our original Pearson Effective Potential (PEP) correction to correctly account for electrostatic quantum effects has been demonstrated on double-gate nMOS capacitors with different film thicknesses. In this work, results obtained from semi-classical, PEP corrected and multi-subband Monte-Carlo approaches are reported for a double-gate nMOSFET with a channel length L

C

= 20nm and a silicon film thickness T

Si

= 8 nm at low and high drain voltages. For the first time, excellent agreements are obtained between quantum corrected and multi-subband Monte-Carlo methods on both electrical characteristics and microscopic quantities.

Metadaten
Titel
Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
verfasst von
M. -A. Jaud
S. Barraud
J. Saint-Martin
A. Bournel
P. Dollfus
H. Jaouen
Copyright-Jahr
2007
Verlag
Springer Vienna
DOI
https://doi.org/10.1007/978-3-211-72861-1_16