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2020 | OriginalPaper | Buchkapitel

Performance Analysis of n-Channel VDG-MOSFET with High Dielectric Permittivity

verfasst von : Ameer F. Roslan, K. E. Kaharudin, F. Salehuddin, A. S. M. Zain, A. R. Hanim, H. Hazura, S. K. Idris, Z. A. M. Napiah

Erschienen in: Intelligent Manufacturing and Mechatronics

Verlag: Springer Singapore

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Abstract

The use of high dielectric permittivity in vertical double gate MOSFET (VDG-MOSFET) can overcome the problem of power dissipation and leakage current. In this paper, we investigated the performance potential of Titanium dioxide (TiO₂) which has been deposited on silicon for use as a high-permittivity gate insulator and tungsten silicide (WSi₂) for use as metal gate based on 2-D numerical simulations. The analysis and optimization of n-channel VDG-MOSFET is conducted, using a combination of L₉ orthogonal array (OA) of Taguchi method and grey relational analysis (GRA). Four process parameters which are V_TH implant energy, halo implant dose, source/drain (S/D) implant dose and S/D implant tilt angle are optimized to obtain the desired value of on-current (I_ON), off-current (I_OFF) and subthreshold slope (SS). The design of experiment (DoE) is based on the L₉ OA of Taguchi method and then the experimental data for multiple responses are converted into a single unit called grey relational grade (GRG). The most optimal level of four process parameters towards multiple responses are selected based on the highest GRG. Based on the analysis of variance (ANOVA), the most significant factor is observed to be S/D implant dose with 35.6% factor effect on GRG. The optimized value for I_ON, I_OFF and SS after the optimization approach are 1599.3 µA/µm, 865.5 pA/µm and 68.02 mV/dec respectively with 0.8362 of GRG.

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Titel: Performance Analysis of n-Channel VDG-MOSFET with High Dielectric Permittivity
verfasst von: Ameer F. Roslan
K. E. Kaharudin
F. Salehuddin
A. S. M. Zain
A. R. Hanim
H. Hazura
S. K. Idris
Z. A. M. Napiah
Verlag: Springer Singapore
Buch: Intelligent Manufacturing and Mechatronics
Print ISBN: 978-981-13-9538-3

Electronic ISBN: 978-981-13-9539-0

Copyright-Jahr: 2020
DOI: https://doi.org/10.1007/978-981-13-9539-0_46

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