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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 3/2015

01.03.2015

Performance characteristics of quantum dot infrared photodetectors under illumination condition

verfasst von: Hongmei Liu, Qinghua Tong, Guizhi Liu, Chunhua Yang, Yunlong Shi

Erschienen in: Optical and Quantum Electronics | Ausgabe 3/2015

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Abstract

Quantum dot infrared photodetector (QDIP) has shown some good performances, for example, a high responsivity, a large detectivity, due to its quantum-dot nanostructure, and already attracted more and more attention in recent years. In this paper, a physical model used to evaluate the performance of the QDIPs under illumination condition is derived. This model supposes that the total electron transport and the self-consistent potential distribution determine together the performance of the QDIP under illumination, and the dependences of the drift velocity and the photoconductive gain on the applied electric field are also considered and included in this model. The corresponding results are calculated out and show a good agreement with the published results, which illustrates the validity and the correctness of the model.
Vorheriger Artikel Edge-emitting semiconductor laser driven by a van der Pol oscillator: analytical and numerical analysis
Nächster Artikel Design analysis of back-illuminated separated absorption and multiplication AlGaN APDs with polarization field

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Metadaten
Titel
Performance characteristics of quantum dot infrared photodetectors under illumination condition
verfasst von
Hongmei Liu
Qinghua Tong
Guizhi Liu
Chunhua Yang
Yunlong Shi
Publikationsdatum
01.03.2015
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 3/2015
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-014-9947-6

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