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Erschienen in: Journal of Electronic Testing 4/2021

11.10.2021

Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability

verfasst von: Hussein Bazzi, Hassen Aziza, Mathieu Moreau, Adnan Harb

Erschienen in: Journal of Electronic Testing | Ausgabe 4/2021

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Abstract

Static Random-Access Memories (SRAMs) are an integral part of the chip industry, occupying a noticeable share of the memory market due to their high performance and compatibility with CMOS technology. Traditional SRAMs do not have the capacity to retain data after power-off, preventing their use in non-volatile applications. This paper presents a novel Non-Volatile SRAM (NVSRAM) device based on Resistive RAM (RRAM) technology. A comparison between SRAM and the proposed NVSRAM performances is proposed at both cell and memory array level. The comparison covers several metrics such as energy consumption, area and static noise margin (SNM). Moreover, this work proposes a deep analysis of the impact of RRAM variability as well as the CMOS subsystem variability on the NVSRAM performances. The proposed structure demonstrates robust NVSRAM performances in terms of stability and reliability despite RRAM variability.
Vorheriger Artikel Fault-Aware Dependability Enhancement Techniques for Phase Change Memory
Nächster Artikel Investigation of the Impact of BTI Aging Phenomenon on Analog Amplifiers

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Metadaten
Titel
Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability
verfasst von
Hussein Bazzi
Hassen Aziza
Mathieu Moreau
Adnan Harb
Publikationsdatum
11.10.2021
Verlag
Springer US
Erschienen in
Journal of Electronic Testing / Ausgabe 4/2021
Print ISSN: 0923-8174
Elektronische ISSN: 1573-0727
DOI
https://doi.org/10.1007/s10836-021-05965-x

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