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Erschienen in: Journal of Materials Science: Materials in Electronics 9/2016

29.04.2016

Phase transformation and thermal stability of ZnSe QDs due to annealing: emergence of ZnO

verfasst von: M. Verma, A. Kaswan, D. Patidar, K. B. Sharma, N. S. Saxena

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2016

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Abstract

In the present study ZnSe quantum dots (QDs) were synthesized by chemical co-precipitation method using mercaptoethanol as the capping agent. These nanostructures were characterized for structure and surface morphology by using X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectrometry respectively. The average size of ZnSe quantum dots from XRD and HRTEM is found to be 4–5 nm having cubic crystalline phase. Effect of annealing temperature, which were determined as phase transformation temperatures (299 and 426 °C) using differential scanning calorimetry has been investigated for structural and thermal stability of QDs. The XRD of annealed samples at temperatures 325 and 442 °C (slightly higher than the temperatures corresponding to two crystallization peaks in the DSC scan) have been carried out to find structural changes corresponding to these annealing temperatures. Sample annealed at 325 °C showed no change in the phase except improvement in intensity of peaks (crystallinity) whereas sample annealed at 442 °C showed transitions from cubic phase of ZnSe to ZnO and orthorhombic phases of ZnSeO4, ZnSeO3. Emergence of ZnO peaks in the XRD pattern of annealed samples have been further verified by Raman spectroscopy of the annealed samples. Besides this crystallization kinetics of ZnSe quantum dots has been employed to determine activation energies of these transitions due to oxidation by employing Kissinger, Augis Bennett and Ozawa’s models. Higher activation energy of crystallization corresponding to first crystallization peak shows that the cubic phase is more thermally stable.

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Metadaten
Titel
Phase transformation and thermal stability of ZnSe QDs due to annealing: emergence of ZnO
verfasst von
M. Verma
A. Kaswan
D. Patidar
K. B. Sharma
N. S. Saxena
Publikationsdatum
29.04.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-4912-8

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