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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 19/2018

04.08.2018

Photodiode based on Pb0.9Cd0.1S ternary alloy semiconductor for solar tracking systems

verfasst von: S. Wageh, Abdulkerim Karabulut, A. Dere, Abdullah G. Al-Sehemi, Ahmed A. Al-Ghamdi, Farid El-Tantawy, F. Yakuphanoglu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 19/2018

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Abstract

The fabrication and photoelectrical properties of the photodiodes based on the ternary alloy of semiconductor nanocrystallite Pb0.9Cd0.1S with coumarin dopant were investigated. The structure, stability, melting temperature and optical bandgap of the prepared nanostructure were characterized by X-ray diffraction, thermogravimetric analysis, Infrared, Raman spectroscopy and UV-VIS-NIR spectroscopies. The characterization of the ternary alloy indicates that the crystal structure of the ternary alloy is cubic with some distortion in (111) direction and has a nanosize of 9 nm. The photoelectrical characteristics of fabricated Si-based photodiodes with coumarin doped PbCdS interfacial layers were investigated by using current–voltage, transient photocurrent and capacitance/conductance-voltage measurements. Some electrical parameters and the effects of illumination on these parameters have been determined from these measurements. Consequently, results of experiments suggest that the ternary alloy Pb0.9Cd0.1S nanocrystallite based photodiode can be suitable for optoelectronic applications.
Vorheriger Artikel Structure, piezoelectric, ferroelectric and dielectric properties of lead-free ceramics 0.67BiFeO3–0.33BaTiO3–xBiGaO3+0.0035MnO2
Nächster Artikel Fabrication the hybrization of ZnO nanorods–Graphene nanoslices and their electrochemical properties to Levodopa in the presence of uric acid

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Metadaten
Titel
Photodiode based on Pb0.9Cd0.1S ternary alloy semiconductor for solar tracking systems
verfasst von
S. Wageh
Abdulkerim Karabulut
A. Dere
Abdullah G. Al-Sehemi
Ahmed A. Al-Ghamdi
Farid El-Tantawy
F. Yakuphanoglu
Publikationsdatum
04.08.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 19/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9783-8

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