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Erschienen in: Journal of Materials Science: Materials in Electronics 17/2020

24.07.2020

Photoluminescence and comparative thermoluminescence studies of UV/γ-irradiated Dy3+ doped bismuth silicate phosphor

verfasst von: Ekta Chandrawanshi, D. P. Bisen, Nameeta Brahme, Ganesh Banjare, Tripti Richhariya, Yugbodh Patle

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 17/2020

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Abstract

A series of Bi4Si3O12:Dy3+ phosphor have been synthesized via conventional solid-state reaction method and its luminescence properties were investigated as near cool white light emitting and long afterglow phosphor. Crystal structure and phase structure characterization is determined using X-ray diffraction (XRD), SEM and EDS. Rietveld structural refinement and XRD confirms that prepared sample exhibit pure cubic structure [space group I-43d]. Photoluminescence spectra of both doped and undoped Bi4Si3O12 phosphor were efficiently excited in the range of 200-450 nm, and prepared phosphor under 272 nm excitation exhibit three emission peaks located at 463 nm(blue), 482 nm(blue) and 576 nm (yellow) corresponding to 3P1 → 1S0, 4F9/2 → 6H15/2 and 4F9/2 → 6H13/2 transitions. Characteristic emission peaks of Dy3+ centered at 482 nm and 576 nm were assigned for white light emission. The calculated Commission Internationale de I’Eclairage (CIE) chromaticity confirms that with Dy3+ doping, the luminescence co-ordinates of Bi4Si3O12 phosphor shift to near white(x = 0.316, y = 0.358) region which is close to commercial pc-LED (Blue LED + YAG:Ce3+) (x = 0.320, y = 0.320) co-ordinates. Computation of correlated color temperature 6184 K endorses that prepared phosphor is cool in nature and can be served as white light emitting phosphor. Comparative thermoluminescence study of UV and γ-irradiated Bi4Si3O12:Dy3+ phosphor is performed for the dosimetry application. TL intensity is recorded maximum at 30 min under UV irradiation (256 nm), and for γ irradiation, it was recorded at 10 kGy dose rate. γ-irradiated Bi4Si3O12:Dy3+ phosphor TL study is reported for the first time at different dose rate and concentration for high dosimetry application. The defect characteristic is examined, Trap depths and other kinetic parameters are also evaluated by Chen’s peak shape method. Decay and fading measurement under UV/γ irradiation are performed to examine the long after glow properties of prepared samples. TL emission spectrum studies are also performed.

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Metadaten
Titel
Photoluminescence and comparative thermoluminescence studies of UV/γ-irradiated Dy3+ doped bismuth silicate phosphor
verfasst von
Ekta Chandrawanshi
D. P. Bisen
Nameeta Brahme
Ganesh Banjare
Tripti Richhariya
Yugbodh Patle
Publikationsdatum
24.07.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 17/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04005-2

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