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Erschienen in: Journal of Materials Science: Materials in Electronics 8/2018

20.01.2018

Photoluminescence and electrical properties of Eu3+ doped CaBi8Ti7O27 intergrowth ceramics

verfasst von: Gang Fan, Xiangping Jiang, Chao Chen, Yunjing Chen, Keyi Du, Na Tu, Xingan Jiang, Xiang Xia, Pengbin Wang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2018

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Abstract

CaBi8−xEu x Ti7O27 (CBT-BIT-xEu3+, x = 0.00, 0.05, 0.10, 0.15, and 0.20) intergrowth-structured ceramics were synthesized using a solid-state reaction method. The intergrowth structures were successfully obtained and clearly observed by HR-TEM along the [\(\bar {1}10\)] zone axis. Raman patterns indicated that Eu3+ preferred to occupy the A sites in pseudo-perovskite layers and increased the orthorhombicity and structural distortion degree of TiO6 octahedra, which was further supported by refined structural parameters produced by GSAS software. As a consequence of increased orthorhombicity, the Curie temperature was increased from 736 °C for pure CBT-BIT to 758 °C for CBT-BIT-0.1Eu3+ ceramic. Simultaneously, CBT-BIT-0.1Eu3+ achieved the strongest red–orange emission and the CIE chromaticity coordinates calculated to be (0.627, 0.372), which suggested the potential applications of this material in high-temperature electrooptic applications.

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Metadaten
Titel
Photoluminescence and electrical properties of Eu3+ doped CaBi8Ti7O27 intergrowth ceramics
verfasst von
Gang Fan
Xiangping Jiang
Chao Chen
Yunjing Chen
Keyi Du
Na Tu
Xingan Jiang
Xiang Xia
Pengbin Wang
Publikationsdatum
20.01.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 8/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8630-2

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