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Journal of Materials Science
Erschienen in: Journal of Materials Science 25/2020

16.05.2020 | Metals & corrosion

Plastic deformation mechanisms of hierarchical double contraction nanotwins in Mg

verfasst von: Xiao-Wei Hou, Xiao-Zhi Tang, Qun Zu, Ya-Fang Guo

Erschienen in: Journal of Materials Science | Ausgabe 25/2020

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Abstract

Recent experiments demonstrated that hierarchical double contraction nanotwins (DCTWs), i.e., \( \left\{ {10\bar{1}1} \right\} - \left\{ {10\bar{1}1} \right\} \) nanotwinned structures, can simultaneously improve the strength and ductility of Mg–Li alloys. With Mg as model material using atomistic simulations and interface defect analysis, we characterize structural characteristics of boundaries associated with DCTWs and investigate plastic deformation mechanisms of double contraction nanotwinned structures. It is revealed that the boundaries associated with DCTWs are composed of \( \left\{ {10\bar{1}1} \right\} \) coherent twin boundaries (CTBs), symmetrical tilt grain boundaries (STGBs), and asymmetrical tilt grain boundaries (ASTGBs). Under mechanical loadings, the corresponding grain boundary defects along STGBs and ASTGBs act as sources for nucleating and emitting basal and pyramidal dislocations, enhancing the plasticity. Meanwhile, the densely distributed CTBs in DCTWs act as strong barriers for dislocation motion, strengthening the material.
Vorheriger Artikel Microstructure and cyclic oxidation of a Hf-doped (Ni,Pt)Al coating for single-crystal superalloys
Nächster Artikel The direct assembly of metalloporphyrin and Mg–Al layered double hydroxides nanosheets: a highly efficient catalyst for the green epoxidation of olefins

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Metadaten
Titel
Plastic deformation mechanisms of hierarchical double contraction nanotwins in Mg
verfasst von
Xiao-Wei Hou
Xiao-Zhi Tang
Qun Zu
Ya-Fang Guo
Publikationsdatum
16.05.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 25/2020
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-020-04789-y

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