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2010 | OriginalPaper | Buchkapitel

3. Polariton Devices Based on Wide Bandgap Semiconductor Microcavities

verfasst von : Ryoko Shimada, Ümit Özgür, Hadis Morkoç

Erschienen in: Nanoscale Photonics and Optoelectronics

Verlag: Springer New York

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Abstract

Cavity polaritons which are the elementary optical excitations in semiconductor microcavities may be viewed as a superposition of excitons and cavity photons. The major feature of cavity polariton technology centers on large and unique optical nonlinearities which would lead to a new class of optical devices such as polariton lasers exhibiting very low thresholds and polariton parametric amplifiers with ultrafast response. Among the wide bandgap semiconductors, GaN and ZnO are promising candidates for low-threshold polariton lasers operating at room temperature because of their large oscillator strengths and large exciton binding energies, particularly ZnO with its unmatched exciton binding energy of 60 meV. In this chapter, the recent progress on polariton devices based on wide bandgap semiconductor microcavities is reviewed.

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Titel: Polariton Devices Based on Wide Bandgap Semiconductor Microcavities
verfasst von: Ryoko Shimada
Ümit Özgür
Hadis Morkoç
Verlag: Springer New York
Buch: Nanoscale Photonics and Optoelectronics
Print ISBN: 978-1-4419-7233-0

Electronic ISBN: 978-1-4419-7587-4

Copyright-Jahr: 2010
DOI: https://doi.org/10.1007/978-1-4419-7587-4_3

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