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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 8/2019

18.03.2019

Porphyrin based hole transport layers for enhanced charge transport and stability in perovskite solar cells

verfasst von: Muhammad Naeem Shah, Srinivasa Rao Pathipati, Numan Ahmed

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2019

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Abstract

We have synthesized 5, 10, 15, 20-tetrakis {4-[N, N-di(4-methoxylphenyl) amino-phenyl]-porphyrin (Po) and its cobalt complex cobalt–porphyrin (CoP) hole-transport materials for efficient perovskite solar cells. Both Po and CoP exhibit excellent hole mobility and favorable energetic alignment with perovskite for hole extraction. Our results clearly show that incorporation of cobalt atom into Po boosts the power conversion efficiency up to 16.9%, which is 14% higher than without cobalt atom. CoP based devices exhibit better stability than Po devices. The perovskite layers that are deposited on top of CoP exhibit better crystallinity compared to Po, which are supported by the X-ray diffraction and morphological studies. These results are further evident from time-resolved photoluminescence.
Vorheriger Artikel Nonlinear optical properties of irradiated 1,2-dihydroxyanthraquinone thin films: merged experimental and TD-DFT insights
Nächster Artikel Effect of different pretreatment methods on sesame husk-based activated carbon for supercapacitors with aqueous and organic electrolytes

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Metadaten
Titel
Porphyrin based hole transport layers for enhanced charge transport and stability in perovskite solar cells
verfasst von
Muhammad Naeem Shah
Srinivasa Rao Pathipati
Numan Ahmed
Publikationsdatum
18.03.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 8/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01106-5

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