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Erschienen in: Journal of Materials Science: Materials in Electronics 11/2016

19.07.2016

Post cleaning effects on silicon nanowires grown by electroless etching

verfasst von: Victor H. Velez, Kalpathy B. Sundaram

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2016

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Abstract

Low optical reflectance in silicon nanowires (SiNWs) is obtained when a stirring mechanism is introduced during the post-cleaning process. Achieving low optical reflectance may be of great interest for the production of solar cells. These SiNWs were fabricated at room temperature employing the electroless etching technique using an etching solution consisting of silver nitrate and hydrofluoric acid. Experiments show that residual silver dendrites left in the SiNWs array during the electroless etching process may interfere with the reflectance. The results exhibit an optical reflectance in SiNWs as low as 0.7 %.

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Metadaten
Titel
Post cleaning effects on silicon nanowires grown by electroless etching
verfasst von
Victor H. Velez
Kalpathy B. Sundaram
Publikationsdatum
19.07.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5381-9

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