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Journal of Materials Science: Materials in Electronics

Erschienen in:

20.07.2019

Post-treatment of Nb₂O₅ compact layer in dye-sensitized solar cells for low-level lighting applications

verfasst von: Kai-Wen Chen, Li-Syuan Chen, Chih-Ming Chen

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 16/2019

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Abstract

Introduction of an ultrathin compact layer in dye-sensitized solar cells (DSSCs) can improve the cell efficiency under standard one sun illumination (> 100,000 lx). Herein, an ultrathin Nb₂O₅ layer is deposited on the TiO₂-coated photoanode using a facial dip-coating method and its effects on the cell efficiency under a low level of light intensity (300–6000 lx) is studied. The results show that the ultrathin Nb₂O₅ layer helps the DSSCs to improve their power conversion efficiency (PCE) through different ways under standard one sun and low power illuminations. Under strong one sun illumination, the PCE of DSSC is improved by improving the short-circuit current density (J_SC) which can be attributed to an increment of the surface area of photoanode for more dye adsorption and the blocking effect of Nb₂O₅. Under low power illumination, the introduction of Nb₂O₅ blocking layer improves the fill factor by effectively suppressing the charge recombination on the photoanode.

Vorheriger Artikel Bosk-like monocrystal of Co–Sn–Se grown on porous Ti for electrocatalytic hydrogen evolution

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Titel: Post-treatment of Nb2O5 compact layer in dye-sensitized solar cells for low-level lighting applications
verfasst von: Kai-Wen Chen
Li-Syuan Chen
Chih-Ming Chen
Publikationsdatum: 20.07.2019
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 16/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-01883-z

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