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Erschienen in:
01.05.2020 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect
Erschienen in: Semiconductors | Ausgabe 5/2020
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Abstract
The possibility of predicting the magnitude of the trapped charge in the buried oxide of silicon-on-insulator structures using the Poole–Frenkel effect is investigated. The conditions for the Poole–Frenkel effect in this layer are determined by measuring and modeling the current–voltage characteristics of buried silicon oxide at various temperatures. Processes occurring in the buried oxide when measuring the current–voltage characteristics and during annealing are considered. The conditions of thermal-field treatment of the buried oxide for imitation of the radiation effect using injection are determined. The dependence of the magnitude of the accumulated positive charge in buried silicon oxide due to injection on the Poole–Frenkel current is evaluated. The possibility of applying the Poole–Frenkel effect for evaluating the imperfection of the buried oxide when fabricating microcircuits with increased radiation-dose resistance is shown.