Preparation and characterization of pulsed laser deposited CdSe window layer for Sb₂Se₃ thin film solar cell

Antimony selenide (Sb₂Se₃) is a potential photoelectric absorber for its excellent photoelectric properties, low cost and less pollution. At present, the main window layers are CdS, ZnO, TiO₂ and SnO₂ in Sb₂Se₃ solar cells, while there is a lack of research on CdSe film. Here, the CdSe films were deposited at 100 °C, 200 °C, 300 °C and 400 °C by pulsed laser deposition as the window layer of Sb₂Se₃ solar cell. The XRD and TC values results for CdSe/Sb₂Se₃ films demonstrated that CdSe films deposited at different temperatures can promote the (hk1) orientation growth of Sb₂Se₃ films, in which the (221) orientation of Sb₂Se₃ film is optimal when the CdSe film deposited at 300 °C. Scanning electron microscope results showed that the surface of the Sb₂Se₃ thin film with CdSe film deposited at 300 °C has relatively uniform grains. Comparing the different temperatures, the CdSe/Sb₂Se₃ heterojunction was obtained by deposition of CdSe thin films at 300 °C, with the highest efficiency of 3.65%. This study confirmed the feasibility of CdSe thin film as a window layer of Sb₂Se₃ solar cells.