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Erschienen in: Journal of Sol-Gel Science and Technology 3/2018

15.02.2018 | Original Paper: Sol-gel and hybrid materials for catalytic, photoelectrochemical and sensor applications

Preparation and characterization of the system NiMn2O4/TiO2 by sol–gel: application to the photodegradation of benzamide under visible light

verfasst von: Gharib Rekhila, Yamina Gabes, Razika Brahimi, Yassine Bessekhouad, Ousama Mahroua, Mohamed Trari

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 3/2018

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Abstract

Benzamide is successfully degraded on the novel heterosystem NiMn2O4/TiO2 under visible light. The nanosized spinel is synthesized by the sol–gel method at ~850 °C. The X-ray diffraction pattern shows narrow peaks and the oxides are well crystallized. The Mott–Schottky plot (C−2E) of NiMn2O4 is characteristic of p-type conductivity from which a flat-band potential of −0.20 VSCE is obtained. The energy-band diagram, built from the physicochemical characterizations, predicts the electron transfer from the conduction to dissolved oxygen via TiO2. The loading of TiO2 with NiMn2O4 enhances the photoactivity and NiMn2O4 islands achieve a colloidal photochemical heterosystem, tested successfully for the light-induced benzamide degradation. The spinel dose and benzamide concentration are optimized. Under the ideal conditions, the rate of the benzamide disappearance is controlled by high-performance liquid chromatography. A conversion of 85% is reported in aerated benzamide solution (15 ppm) in less than 2 h under artificial light. This conversion rate increases up to 94% under solar light and the oxidation obeys to a first-order kinetics with a half-life of 53 min.

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Metadaten
Titel
Preparation and characterization of the system NiMn2O4/TiO2 by sol–gel: application to the photodegradation of benzamide under visible light
verfasst von
Gharib Rekhila
Yamina Gabes
Razika Brahimi
Yassine Bessekhouad
Ousama Mahroua
Mohamed Trari
Publikationsdatum
15.02.2018
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 3/2018
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-018-4598-x

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