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Erschienen in: Microsystem Technologies 10/2018

15.11.2017 | Technical Paper

Preparation and photoluminescence properties of Eu3+ ion-doped Mg2LaTaO6 phosphor

verfasst von: Kuan-Ting Liu, Hao-Long Chen, Mu-Tsun Tsai, Yee-Shin Chang

Erschienen in: Microsystem Technologies | Ausgabe 10/2018

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Abstract

The luminescent properties of Eu3+ ion-doped Mg2LaTaO4 phosphors were synthesized using a vibrating milled solid-state reaction. The XRD results show that the crystal structure of the Mg2LaTaO4:Eu3+ phosphor that is calcined at 1450 °C for 8 h has a cubic structure and the (440) diffraction peak shifts to a higher diffraction angle when the Eu3+ ion concentration increases. The absorption spectra results show that the absorption band d in the range 190–400 nm is attributed to absorption of pure Mg2LaTaO4 by the host lattice. When Mg2LaTaO4 is doped with Eu3+ ions, the broad band that is centered at 295 nm is assigned to the charge transition state (CTS) for the interaction of O2− and Eu3+ with the Mg2LaTaO4 host lattice. The sharp peaks from 310 to 550 nm are attributed to the typical intra-4f transitions of Eu3+ ions. When the phosphor is excited using either 393 or 464 nm there is a red emission at 605 nm that is attributed to the electric dipole transition (5D0 → 7F2) for the Eu3+ ion. The asymmetry ratio is about 2–2.5, which lies well within the range of usual values for oxide glasses, which demonstrates that the Eu3+ ions occupy low-symmetry sites. The maximum intensity of the photoluminescence for the 5D0 → 7F2 transition occurs at an Eu3+ ion concentration of 30 mol%, which demonstrates that there is concentration quenching at higher Eu3+ concentrations. The critical distance is about 7.68 Å for the 5D0 (J = 3, 2, 1) transition and the energy transfer is characterized as a wave-function exchange.

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Metadaten
Titel
Preparation and photoluminescence properties of Eu3+ ion-doped Mg2LaTaO6 phosphor
verfasst von
Kuan-Ting Liu
Hao-Long Chen
Mu-Tsun Tsai
Yee-Shin Chang
Publikationsdatum
15.11.2017
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 10/2018
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-017-3617-0

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