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Erschienen in:
Surface-Potential-Based Compact Model of Bulk MOSFET Kapitel lesen Erstes Kapitel lesen

2010 | OriginalPaper | Buchkapitel

2. PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs

verfasst von : Weimin Wu, Wei Yao, Gennady Gildenblat

Erschienen in: Compact Modeling

Verlag: Springer Netherlands

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Abstract

Surface-potential-based models, which represent the mainstream approach to compact modeling of bulk MOSFETs, are now in the process of being applied to SOI devices. In this chapter we discuss two advanced SOI models—PSP-SOI-PD for partially depleted devices and PSP-SOI-DD including the dynamic depletion effects. Both models are based on the popular PSP model of bulk MOSFETs. The theoretical foundation of all PSP-family models is the symmetric linearization method that allows one to raise the physical contents of the compact model without prohibitive increase in its computational complexity. In addition to the physics-based structure of the new models inherited from bulk PSP, they account for phenomena specific to SOI devices (e.g. floating body, and valence band tunneling current) and include a detailed description of parasitic effects. We discuss both the theoretical developments and verification of the model against test data and TCAD simulations with particular emphasis on the interplay between the model structure and its simulation capabilities.

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Vorheriges Kapitel Surface-Potential-Based Compact Model of Bulk MOSFET
Nächstes Kapitel Benchmark Tests for MOSFET Compact Models
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Metadaten
Titel
PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs
verfasst von
Weimin Wu
Wei Yao
Gennady Gildenblat
Copyright-Jahr
2010
Verlag
Springer Netherlands
Buch
Compact Modeling

Print ISBN: 978-90-481-8613-6

Electronic ISBN: 978-90-481-8614-3

Copyright-Jahr: 2010

DOI
https://doi.org/10.1007/978-90-481-8614-3_2

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