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1982 | OriginalPaper | Buchkapitel

Quantitative Distribution Analysis of B, As and P in Si for Process Simulation

verfasst von : M. Grasserbauer, G. Stingeder, E. Guerrero, H. Pötzl, R. Tielert, H. Ryssel

Erschienen in: Secondary Ion Mass Spectrometry SIMS III

Verlag: Springer Berlin Heidelberg

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For the development and improvement of process simulation accurate information about the (depth) distribution of dopant elements (electrically active fraction and total elemental concentration) as a function of process parameters has to be obtained. The analytical requirements for distribution analysis as applied for process simulation are stringent: i)high precision and accuracyii)high detection power and large dynamic rage (concentra-tion range of interest: 1014–5·1021 at/cm3)iii)high depth resolution (shallow p/n-structures in modern devices)

Metadaten
Titel
Quantitative Distribution Analysis of B, As and P in Si for Process Simulation
verfasst von
M. Grasserbauer
G. Stingeder
E. Guerrero
H. Pötzl
R. Tielert
H. Ryssel
Copyright-Jahr
1982
Verlag
Springer Berlin Heidelberg
DOI
https://doi.org/10.1007/978-3-642-88152-7_49