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Erschienen in:
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2014 | OriginalPaper | Buchkapitel

2. Random Process Variation in Deep-Submicron CMOS

verfasst von : Amir Zjajo

Erschienen in: Stochastic Process Variation in Deep-Submicron CMOS

Verlag: Springer Netherlands

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Abstract

One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key parameters affecting performance of integrated circuits [1]. Although scaling made controlling extrinsic variability more complex, nonetheless, the most profound reason for the future increase in parameter variability is that the technology is approaching the regime of fundamental randomness in the behavior of silicon structures where device operation must be described as a stochastic process. Electric noise due to the trapping and de-trapping of electrons in lattice defects may result in large current fluctuations, and those may be different for each device within a circuit.

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Vorheriges Kapitel Introduction
Nächstes Kapitel Electrical Noise in Deep-Submicron CMOS
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Metadaten
Titel
Random Process Variation in Deep-Submicron CMOS
verfasst von
Amir Zjajo
Copyright-Jahr
2014
Verlag
Springer Netherlands
Buch
Stochastic Process Variation in Deep-Submicron CMOS

Print ISBN: 978-94-007-7780-4

Electronic ISBN: 978-94-007-7781-1

Copyright-Jahr: 2014

DOI
https://doi.org/10.1007/978-94-007-7781-1_2

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