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Erschienen in: Rare Metals 8/2016

01.08.2016

Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets (1 ≤ n ≤ 4) on SiO2/Si substrate

verfasst von: Yi-Ping Wang, Hui-Jun Zhou, Gui-Hua Zhao, Tian-Long Xia, Lei Wang, Le Wang, Li-Yuan Zhang

Erschienen in: Rare Metals | Ausgabe 8/2016

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Abstract

The optical, thermal and electrical properties of ultra-thin two-dimensional (2D) crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes (n) of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy (AFM) measurements fit well with the values measured by spectroscopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes (1 ≤ n ≤ 4) accurately and rapidly.

Graphical Abstract

The optical contrast of thin-layer (1 ≤ n ≤ 4) MoSe2 sample was calculated by Fresnel’s law, and the contrast was measured by OM image. By combining these two group data, a function of layer numbers and contrast was developed: C (contrast) = 0.07N + 0.177. This proves that contrast is linear to layer numbers of MoSe2 when layer number is less than 4.

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Metadaten
Titel
Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets (1 ≤ n ≤ 4) on SiO2/Si substrate
verfasst von
Yi-Ping Wang
Hui-Jun Zhou
Gui-Hua Zhao
Tian-Long Xia
Lei Wang
Le Wang
Li-Yuan Zhang
Publikationsdatum
01.08.2016
Verlag
Nonferrous Metals Society of China
Erschienen in
Rare Metals / Ausgabe 8/2016
Print ISSN: 1001-0521
Elektronische ISSN: 1867-7185
DOI
https://doi.org/10.1007/s12598-016-0776-6

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