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2018 | OriginalPaper | Buchkapitel

2. Readout Methods for BJT-Based Temperature Sensors

verfasst von : Kamran Souri, Kofi A. A. Makinwa

Erschienen in: Energy-Efficient Smart Temperature Sensors in CMOS Technology

Verlag: Springer International Publishing

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Abstract

As discussed in the previous chapter, BJT-based temperature sensors are promising candidates for use in wireless temperature sensing applications. In this chapter, we first describe the operating principle of BJT-based sensors, followed by an overview of various readout methods. The energy-efficiency of these methods is then discussed, and compared to the ultimate achievable efficiency of BJT-based sensors.

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Literatur
1.
Zurück zum Zitat M.A.P. Pertijs, K.A.A. Makinwa, J.H. Huijsing, A CMOS temperature sensor with a 3σ inaccuracy of ± 0. 1∘C from − 55∘C to 125∘C. IEEE J. Solid State Circuits 40(12), 2805–2815 (2005) M.A.P. Pertijs, K.A.A. Makinwa, J.H. Huijsing, A CMOS temperature sensor with a 3σ inaccuracy of ± 0. 1C from − 55C to 125C. IEEE J. Solid State Circuits 40(12), 2805–2815 (2005)
2.
Zurück zum Zitat A.L. Aita, M.A.P. Pertijs, K.A.A. Makinwa, J.H. Huijsing, A CMOS smart temperature sensor with a batch-calibrated inaccuracy of ± 0. 25∘C (3σ) from − 70∘C to 130∘C, in Digest of Technical Papers ISSCC, Feb 2009, pp. 342–343 A.L. Aita, M.A.P. Pertijs, K.A.A. Makinwa, J.H. Huijsing, A CMOS smart temperature sensor with a batch-calibrated inaccuracy of ± 0. 25C (3σ) from − 70C to 130C, in Digest of Technical Papers ISSCC, Feb 2009, pp. 342–343
3.
Zurück zum Zitat J.F. Creemer, F. Fruett, G.C. Meijer, P.J. French, The piezojunction effect in silicon sensors and circuits and its relation to piezoresistance. IEEE Sens. J. 1(2), 98–108 (2001)CrossRef J.F. Creemer, F. Fruett, G.C. Meijer, P.J. French, The piezojunction effect in silicon sensors and circuits and its relation to piezoresistance. IEEE Sens. J. 1(2), 98–108 (2001)CrossRef
4.
Zurück zum Zitat F. Fruett, G.C. Meijer, The Piezojunction Effect in Silicon Integrated Circuits and Sensors (Kluwer Academic, Boston, 2002) F. Fruett, G.C. Meijer, The Piezojunction Effect in Silicon Integrated Circuits and Sensors (Kluwer Academic, Boston, 2002)
5.
Zurück zum Zitat M.A.P. Pertijs, J.H. Huijsing, Precision Temperature Sensors in CMOS Technology (Springer, Dordrecht, 2006) M.A.P. Pertijs, J.H. Huijsing, Precision Temperature Sensors in CMOS Technology (Springer, Dordrecht, 2006)
6.
Zurück zum Zitat G. Wang, G.C. Meijer, The temperature characteristics of bipolar transistors fabricated in CMOS technology. Sens. Actuators A 87, 81–89 (2000)CrossRef G. Wang, G.C. Meijer, The temperature characteristics of bipolar transistors fabricated in CMOS technology. Sens. Actuators A 87, 81–89 (2000)CrossRef
7.
Zurück zum Zitat M.A.P. Pertijs, A. Niederkorn, M. Xu, B. McKillop, A. Bakker, J.H. Huijsing, A CMOS smart temperature sensor with a 3σ inaccuracy of ± 0. 5∘C from − 50∘C to 120∘C. IEEE J. Solid State Circuits 40(2), 454–461 (2005) M.A.P. Pertijs, A. Niederkorn, M. Xu, B. McKillop, A. Bakker, J.H. Huijsing, A CMOS smart temperature sensor with a 3σ inaccuracy of ± 0. 5C from − 50C to 120C. IEEE J. Solid State Circuits 40(2), 454–461 (2005)
8.
Zurück zum Zitat K. Souri, An energy-efficient smart temperature sensor for RFID applications. M.Sc. dissertation, Delft University of Technology, Delft, Oct. 2009 K. Souri, An energy-efficient smart temperature sensor for RFID applications. M.Sc. dissertation, Delft University of Technology, Delft, Oct. 2009
9.
Zurück zum Zitat G.C. Meijer, Integrated circuits and components for bandgap references and temperature transducers. Ph.D. dissertation, Delft University of Technology, Delft, March 1982 G.C. Meijer, Integrated circuits and components for bandgap references and temperature transducers. Ph.D. dissertation, Delft University of Technology, Delft, March 1982
10.
Zurück zum Zitat A. Bakker, J.H. Huijsing, High-Accuracy CMOS Smart Temperature Sensors (Kluwer Academic, Boston, 2000)CrossRef A. Bakker, J.H. Huijsing, High-Accuracy CMOS Smart Temperature Sensors (Kluwer Academic, Boston, 2000)CrossRef
11.
Zurück zum Zitat M. Law, S. Lu, T. Wu, A. Bermak, P. Mak, R.P. Martins, A 1. 1μW CMOS smart temperature sensor with an inaccuracy of ± 0. 2∘C (3σ) for clinical temperature monitoring. IEEE Sens. J. 16(8), 2272–2281 (2016) M. Law, S. Lu, T. Wu, A. Bermak, P. Mak, R.P. Martins, A 1. 1μW CMOS smart temperature sensor with an inaccuracy of ± 0. 2C (3σ) for clinical temperature monitoring. IEEE Sens. J. 16(8), 2272–2281 (2016)
12.
Zurück zum Zitat K.B. Klaassen, Digitally controlled absolute voltage division. IEEE Trans. Instrum. Meas. 24(2), 106–112 (1975)CrossRef K.B. Klaassen, Digitally controlled absolute voltage division. IEEE Trans. Instrum. Meas. 24(2), 106–112 (1975)CrossRef
13.
Zurück zum Zitat A. Hastings, The Art of Analog Layout (Prentice Hall, New Jersey, 2001) A. Hastings, The Art of Analog Layout (Prentice Hall, New Jersey, 2001)
15.
Zurück zum Zitat K. Souri, Y. Chae, K.A.A. Makinwa, A CMOS temperature sensor with a voltage-calibrated inaccuracy of ± 0. 15∘C (3σ) from − 55∘C to 125∘C. IEEE J. Solid State Circuits 48(1), 292–301 (2013) K. Souri, Y. Chae, K.A.A. Makinwa, A CMOS temperature sensor with a voltage-calibrated inaccuracy of ± 0. 15C (3σ) from − 55C to 125C. IEEE J. Solid State Circuits 48(1), 292–301 (2013)
16.
Zurück zum Zitat C.-H. Weng et al., A CMOS thermistor-embedded continuous-time delta-sigma temperature sensor with a resolution FoM of 0.65pJ∘C2. IEEE J. Solid State Circuits 50(11), 2491–2500 (2015) C.-H. Weng et al., A CMOS thermistor-embedded continuous-time delta-sigma temperature sensor with a resolution FoM of 0.65pJC2. IEEE J. Solid State Circuits 50(11), 2491–2500 (2015)
17.
Zurück zum Zitat A. Heidary et al., A BJT-based CMOS temperature sensor with a 3.6pJ∘C2 resolution FoM, in Digest of Technical Papers ISSCC, Feb 2014, pp. 224–225 A. Heidary et al., A BJT-based CMOS temperature sensor with a 3.6pJC2 resolution FoM, in Digest of Technical Papers ISSCC, Feb 2014, pp. 224–225
18.
Zurück zum Zitat M. Tuthill, A switched-current, switched-capacitor temperature sensor in 0. 6 −μm CMOS. IEEE J. Solid State Circuits 33(7), 1117–1122 (1998) M. Tuthill, A switched-current, switched-capacitor temperature sensor in 0. 6 −μm CMOS. IEEE J. Solid State Circuits 33(7), 1117–1122 (1998)
19.
Zurück zum Zitat A. Bakker, J.H. Huijsing, Micropower CMOS temperature sensor with digital output. IEEE J. Solid State Circuits 31(7), 933–937 (1996)CrossRef A. Bakker, J.H. Huijsing, Micropower CMOS temperature sensor with digital output. IEEE J. Solid State Circuits 31(7), 933–937 (1996)CrossRef
20.
Zurück zum Zitat M.A.P. Pertijs, A. Bakker, J.H. Huijsing, A high-accuracy temperature sensor with second-order curvature correction and digital bus interface, in Proceedings of ISCAS, vol. 1, May 2001, pp. 368–371 M.A.P. Pertijs, A. Bakker, J.H. Huijsing, A high-accuracy temperature sensor with second-order curvature correction and digital bus interface, in Proceedings of ISCAS, vol. 1, May 2001, pp. 368–371
21.
Zurück zum Zitat H. Lakdawala et al., A 1.05V 1.6mW 0. 45∘C 3σ-resolution \(\Delta \Sigma\)-based temperature sensor with parasitic-resistance compensation in 32nm Digital CMOS process. IEEE J. Solid State Circuits 44(12), 3621–3630 (2009) H. Lakdawala et al., A 1.05V 1.6mW 0. 45C 3σ-resolution \(\Delta \Sigma\)-based temperature sensor with parasitic-resistance compensation in 32nm Digital CMOS process. IEEE J. Solid State Circuits 44(12), 3621–3630 (2009)
22.
Zurück zum Zitat J. Markus, J. Silva, G.C. Temes, Theory and applications of incremental \(\Sigma \Delta\) converters. IEEE Trans. Circuits Syst. I, Fundam. Theory Appl. 51(4), 678–690 (2004) J. Markus, J. Silva, G.C. Temes, Theory and applications of incremental \(\Sigma \Delta\) converters. IEEE Trans. Circuits Syst. I, Fundam. Theory Appl. 51(4), 678–690 (2004)
23.
Zurück zum Zitat S.Z. Asl et al., A 1.55x0.85mm2 3ppm 1. 0μA 32.768kHz MEMS-based oscillator, in Digest of Technical Papers ISSCC, Feb 2014, pp. 226–227 S.Z. Asl et al., A 1.55x0.85mm2 3ppm 1. 0μA 32.768kHz MEMS-based oscillator, in Digest of Technical Papers ISSCC, Feb 2014, pp. 226–227
24.
Zurück zum Zitat P. Harpe et al., A 7-to-10b 0-to-4MS/s flexible SAR ADC with 6.5-to-16fJ/conversion-step, in Digest of Technical Papers ISSCC, Feb 2012, pp. 472–474 P. Harpe et al., A 7-to-10b 0-to-4MS/s flexible SAR ADC with 6.5-to-16fJ/conversion-step, in Digest of Technical Papers ISSCC, Feb 2012, pp. 472–474
25.
Zurück zum Zitat P. Harpe et al., A 0.7V 7-to-10 bit 0-to-2MS/s flexible SAR ADC for ultra low-power wireless sensor nodes, in Proceedings of ESSCIRC, Sept. 2012, pp. 373–376 P. Harpe et al., A 0.7V 7-to-10 bit 0-to-2MS/s flexible SAR ADC for ultra low-power wireless sensor nodes, in Proceedings of ESSCIRC, Sept. 2012, pp. 373–376
26.
Zurück zum Zitat N. Verma, A.P. Chandrakasan, An ultra low energy 12-bit rate-resolution scalable SAR ADC for wireless sensor nodes. IEEE J. Solid State Circuits 42(6), 1196–1205 (2007)CrossRef N. Verma, A.P. Chandrakasan, An ultra low energy 12-bit rate-resolution scalable SAR ADC for wireless sensor nodes. IEEE J. Solid State Circuits 42(6), 1196–1205 (2007)CrossRef
27.
Zurück zum Zitat J. Hao Cheong et al., A 400-nW 19.5-fJ/conversion-step 8-ENOB 80-kS/s SAR ADC in 0. 18 −μm CMOS. IEEE Trans. Circuits Syst.-II 58(7), 407–411 (2011) J. Hao Cheong et al., A 400-nW 19.5-fJ/conversion-step 8-ENOB 80-kS/s SAR ADC in 0. 18 −μm CMOS. IEEE Trans. Circuits Syst.-II 58(7), 407–411 (2011)
Metadaten
Titel
Readout Methods for BJT-Based Temperature Sensors
verfasst von
Kamran Souri
Kofi A. A. Makinwa
Copyright-Jahr
2018
DOI
https://doi.org/10.1007/978-3-319-62307-8_2

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