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Erschienen in:
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2016 | OriginalPaper | Buchkapitel

3. Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT

verfasst von : Jiandong Sun

Erschienen in: Field-effect Self-mixing Terahertz Detectors

Verlag: Springer Berlin Heidelberg

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Abstract

In this chapter, the fabrication, characterization, and optimization of self-mixing terahertz field-effect detectors based on AlGaN/GaN 2DEG are introduced in details. By fabrication, five different detectors are made to uncover the self-mixing mechanism and search for an optimized detector design. By characterization, we not only obtain the \(I-V\) characteristics, the responsivity, the noise-equivalent power, the response spectrum, the response speed, the polarization effect, etc, but also we probe the localized self-mixing photocurrent based on which the quasi-static detector model and the design of asymmetric antenna are verified. Under the guidance of the detector model, we focus on the design of terahertz antennas and field-effect gate to improve the detector responsivity and sensitivity. An asymmetric antenna with three dipole blocks is found to be the most effective antenna among the five different designs. A design rule for high-sensitivity terahertz detectors is given.

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Vorheriges Kapitel Field-Effect Self-Mixing Mechanism and Detector Model
Nächstes Kapitel Realization of Resonant Plasmon Excitation and Detection
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Metadaten
Titel
Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT
verfasst von
Jiandong Sun
Copyright-Jahr
2016
Verlag
Springer Berlin Heidelberg
Buch
Field-effect Self-mixing Terahertz Detectors

Print ISBN: 978-3-662-48679-5

Electronic ISBN: 978-3-662-48681-8

Copyright-Jahr: 2016

DOI
https://doi.org/10.1007/978-3-662-48681-8_3

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