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Journal of Electronic Materials

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Open Access 20.05.2020 | Topical Collection: 18th Conference on Defects (DRIP XVIII)

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

verfasst von: Masataka Hourai, Eiichi Asayama, Hideshi Nishikawa, Manabu Nishimoto, Toshiaki Ono, Masahiko Okui

Erschienen in: Journal of Electronic Materials | Ausgabe 9/2020

Vorheriger Artikel A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods

Nächster Artikel Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible

Titel: Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals
verfasst von: Masataka Hourai
Eiichi Asayama
Hideshi Nishikawa
Manabu Nishimoto
Toshiaki Ono
Masahiko Okui
Publikationsdatum: 20.05.2020
Verlag: Springer US
Erschienen in: Journal of Electronic Materials / Ausgabe 9/2020
Print ISSN: 0361-5235
Elektronische ISSN: 1543-186X
DOI: https://doi.org/10.1007/s11664-020-08203-w

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