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Erschienen in:
01.01.2015
Relationships between Sn substitution for Ti and microwave dielectric properties of Mg2(Ti1−xSnx)O4 ceramics system
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2015
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Abstract
Mg2(Ti1−xSnx)O4 (x = 0–1) ceramics were synthesized by the conventional solid-state reaction route. The effect of Sn substitution on the structure, microstructure and microwave dielectric properties of Mg2(Ti1−xSnx)O4 has been investigated. Formation of the solid solution was confirmed by the X-ray diffraction and the measured lattice parameters, which varied linearly from Mg2TiO4 (a = b = c = 8.4402 Å) to Mg2SnO4 (a = b = c = 8.6372 Å). Theoretical density, observed ionic polarizabilities and packing fraction were analyzed. A fine microwave dielectric properties (εr = 12.18, Q × f = 170,130 GHz, τf = −51.7 °C) was achieved for Mg2(Ti0.8Sn0.2)O4 ceramics sintered at 1,510 °C for 4 h.