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Erschienen in:
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics Kapitel lesen Erstes Kapitel lesen

2018 | OriginalPaper | Buchkapitel

4. Reliability of GaN-Based Power Devices

verfasst von : Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin, Isabella Rossetto

Erschienen in: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Verlag: Springer International Publishing

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Abstract

No new product is possible without reliability: this is especially true for new and emerging technology, such as gallium nitride-based devices. For GaN power transistors, breakdown mechanisms play a significant role. The reduction of the robustness and of the long-term reliability still represents a serious issue that must be taken into consideration. The first part of the chapter deals with the above mentioned aspects and mainly focuses on the permanent degradation induced in GaN-based devices by off-state time-dependent mechanisms.

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Vorheriges Kapitel Vertical GaN Transistors for Power Electronics
Nächstes Kapitel Validating GaN Robustness
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Metadaten
Titel
Reliability of GaN-Based Power Devices
verfasst von
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
Maria Ruzzarin
Isabella Rossetto
Copyright-Jahr
2018
Buch
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Print ISBN: 978-3-319-77993-5

Electronic ISBN: 978-3-319-77994-2

Copyright-Jahr: 2018

DOI
https://doi.org/10.1007/978-3-319-77994-2_4

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