Resistive Switching Behavior of TiO\( _{2} \) Nanostructures Grown by Dip Coating Process

In recent years, titanium dioxide (TiO\(_{2}\)) has drawn tremendous attentions due to its excellent electronic properties, nontoxic nature, high chemical stability, low cost, and huge availability in nature. TiO\( _{2} \) nanostructures were grown on boron doped, (100) oriented, 1–10 \(\Omega \)-cm silicon substrates by using wet chemical method, where the concentration of titanium n-butoxide was varied from 0.24 ml to 0.60 ml. The chemical process was conducted at 140\(^\circ \)C for 2 h using an autoclave. The morphological and structural properties of TiO\( _{2} \) nanostructures were investigated by scanning electron microscope (SEM) and X-ray Diffraction (XRD) techniques. The nano flowers like structures were observed by the SEM study and rutile phase of TiO\( _{2} \) was depicted by the XRD analysis. The nanostructures were increasing with the titanium butoxide concentration that was confirmed by SEM study. In precursor concentration of 0.60 ml, the nanostructures of width 256 nm and length 1.54 \(\mu \)m were obtained. Resistive switching study was showing the memory capacity of the nanorod structures.