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Erschienen in: Journal of Sol-Gel Science and Technology 3/2018

10.10.2018 | Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric applications

Resistive switching IGZO micro-arrays realized through UV assisted photochemical solution method

verfasst von: Lingwei Li, Yuanqing Chen, Wenwen Qu, Yuhang He, Hanxiao Yang, Na Li, Yang Song, Yuxia Shen

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 3/2018

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Abstract

A low-cost and facile two-step UV photolysis method was used to prepare the InGaZnO (IGZO) resistive switching films and micro-arrays. Using benzoylacetone (BzAc) as the complexing agent, we synthesized a unique IGZO solution sensitive to the UV light of 328 nm. We found that high-performance resistive switching IGZO amorphous films could be obtained by UV irradiation (325~365 nm) at room temperature (first step), and further exposure to deep UV light of 185 and 254 nm at 150 °C (second step). We found that the first and the second steps of the UV soaking play different roles in the formation process of amorphous IGZO films. Combined with the rinsing process, patterned IGZO micro-arrays acting as memristive units were also obtained using this two-step UV photolysis process. The IGZO micro-arrays with a high ratio of 104 of on-state and off-state resistance were obtained.

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Metadaten
Titel
Resistive switching IGZO micro-arrays realized through UV assisted photochemical solution method
verfasst von
Lingwei Li
Yuanqing Chen
Wenwen Qu
Yuhang He
Hanxiao Yang
Na Li
Yang Song
Yuxia Shen
Publikationsdatum
10.10.2018
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 3/2018
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-018-4843-3

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