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2018 | OriginalPaper | Buchkapitel

2. Review of Switching Concepts and Power Semiconductor Devices

verfasst von : Issa Batarseh, Ahmad Harb

Erschienen in: Power Electronics

Verlag: Springer International Publishing

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Abstract

In this chapter, an overview of power semiconductor switching devices will be given. Only devices that are available in the market and are currently used in power electronics applications will be considered. These devices include unipolar and bipolar devices such as the power diode, bipolar junction transistor (BJT), metal oxide semiconductor field-effect transistors (MOSFETs), and the insulated gate bipolar transistor (IGBT) and thyristor-based devices such as silicon-controlled rectifier (SCR), gate turn-off (GTO) thyristor, TRIAC, static induction transistor and thyristors, and MOS-controlled thyristor (MCT). Detailed discussion of the physical structure, fabrication, and physical behavior of these devices and packaging are beyond the scope of this text. The emphasis here will be on the terminal i-v switching characteristics of the available devices and their current, voltage, and switching limits. Even though most of today’s available semiconductor power devices are made of silicon or germanium materials, other materials such as gallium arsenide, diamond, and silicon carbide are currently being tested.

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Fußnoten
1
Only the on time is shown since the emphasis is on the on and off times. The off time, (1 − D)T S , has only conduction loss
 
2
Normally, the first breakdown voltage refers to the avalanche breakdown caused by the increase in the reverse bias voltage, which can be nondestructive. The second breakdown voltage is a destructive phenomenon caused by localized overheating spots in the device.
 
3
βforced is defined as the ratio I C /I B when the transistor is operating in the saturation mode.
 
Metadaten
Titel
Review of Switching Concepts and Power Semiconductor Devices
verfasst von
Issa Batarseh
Ahmad Harb
Copyright-Jahr
2018
DOI
https://doi.org/10.1007/978-3-319-68366-9_2