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Journal of Materials Science: Materials in Electronics
Erschienen in:

27.10.2016

Role of phosphine free solvents in structural and morphological properties of CuInSe2 nanoparticles

verfasst von: J. Ram Kumar, S. Ananthakumar, S. Moorthy Babu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2016

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Abstract

Copper indium di selenide (CuInSe2) nanoparticles were synthesized using a facile colloidal non-phosphine solvent strategy. Mixture of oleylamine (OLAM), oleic acid (OLA), 1-octadecene (1-ODE) with different proportions were employed as solvents and as well as capping agents. Influence of these solvents on the structure and morphological properties of the synthesized CuInSe2 NPs was analysed. It was found that the solvents considerably play important role on the final morphology of the nanoparticles. OLAM assisted synthesis of CuInSe2 nanoparticles results nanoplate like morphology whereas replacing certain volume of OLAM by OLA and 1-ODE provide a bunch of hierarchical structures. The optical bandgap of the synthesized nanoparticles vary with the nature of the solvents. XRD analysis of the synthesized nanoparticles confirms the presence of chalcopyrite structure. Raman analysis shows the appearance of peak at 171 cm−1 due to the A1 mode of CuInSe2. SEM analysis clearly reveals the influence of solvents on the determination of morphology of the synthesized nanoparticles. EDX and elemental mapping analysis shows presence of nearly stoichiometric composition which was dependent on the nature of solvents used.
Vorheriger Artikel Kesterite based thin film absorber layers from ball milled precursors
Nächster Artikel Modified photo-electrochemical and photo-voltaic properties of solvothermally crystallised TiO2 nanotube arrays

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Metadaten
Titel
Role of phosphine free solvents in structural and morphological properties of CuInSe2 nanoparticles
verfasst von
J. Ram Kumar
S. Ananthakumar
S. Moorthy Babu
Publikationsdatum
27.10.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5915-1

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