01.07.2013 | Ausgabe 7/2013
Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain
- Zeitschrift:
- Optical and Quantum Electronics > Ausgabe 7/2013
Abstract
The plasmonic resonant phenomenon in the terahertz wave band for GaN high electron mobility transistors is investigated by using a finite difference time domain method. Strong resonant absorptions can be obtained where a large area slit grating-gate serves both as electrodes and coupler. Such kinds of plasmonic resonant detection devices are compatible to the well-developed GaN process, and possibly overcome the difficulty in fabricating ultra-short-gate devices for terahertz applications.