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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2014

01.03.2014

Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

verfasst von: Dmitry Pozdnyakov

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2014

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Abstract

As applied to the numerical simulation of electron transport and scattering processes in semiconductors an efficient model describing the scattering of electrons by the ionized impurities is proposed. On the example of GaAs at 77 and 300 K and Si at 300 K the dependencies of low-field electron mobility on the donor impurity concentration in the semiconductors are calculated in the framework of proposed model as well as in the framework of such most frequently used applied models as the Conwel-Weisskopf model and the Brooks-Herring one. After comparing the calculation results with the well-known experimental data it has been ascertained that the best agreement between the theory and experiment is achieved with application of the proposed model.
Vorheriger Artikel An efficient numerical approach to studying impact ionization in sub-micrometer devices

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Metadaten
Titel
Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion
verfasst von
Dmitry Pozdnyakov
Publikationsdatum
01.03.2014
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2014
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-013-0538-8

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