Ausgabe 1/2003
Inhalt (21 Artikel)
Multifrequency kinks in multifrequency external fields
M. E. Polyakov
Electrical activity of dislocations and point defects of deformation origin in CdxHg1−x Te crystals
S. G. Gasan-zade, S. V. Staryi, M. V. Strikha, G. A. Shepel’skii
Determination of deformation potential constants for n-and p-Si from the concentration anharmonicity
A. A. Skvortsov, O. V. Litvinenko, A. M. Orlov
Influence of electronic (charge) state of E traps on their introduction rate in irradiated n-GaAs
V. N. Brudnyi, V. V. Peshev
Study of photocapacitance in diodes fabricated from silicon doped with vanadium
Kh. T. Igamberdiev, A. T. Mamadalimov, R. A. Muminov, T. A. Usmanov, Sh. A. Shoyusupov
Investigation of magnetosensitivity of transistor structures with diffusive transport of injected charge carriers
M. A. Glauberman, V. V. Yegorov, V. V. Kozel, N. A. Kanishcheva
Size effect in two-photon absorption of recombination radiation in graded-gap AlxGa1−x As solid solutions
V. F. Kovalenko, S. V. Shutov
Mathematical simulation of the kinetics of high-temperature silicon oxidation and the structure of the boundary layer in the Si-SiO2 system
G. Ya. Krasnikov, N. A. Zaitsev, I. V. Matyushkin
Effect of thermal annealing of radiation defects on the noise characteristics of silicon p-n structures with a thin multiplication region
A. K. Baranouskii, P. V. Kuchinskii, E. D. Savenok
Photoelectric properties of heterojunctions between silicon and polyhomoconjugated organometallic compounds
N. V. Blinova, E. L. Krasnopeeva, Yu. A. Nikolaev, A. Yu. Osadchev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, V. V. Shamanin
Optical transparency of macroporous silicon with through pores
E. V. Astrova, L. I. Korovin, I. G. Lang, A. D. Remenyuk, V. B. Shuman
Silicon carbide transistor structures as detectors of weakly ionizing radiation
N. B. Strokan, A. M. Ivanov, M. E. Boiko, N. S. Savkina, A. M. Strel’chuk, A. A. Lebedev, R. Yakimova
Lateral electronic transport in short-period InAs/GaAs superlattices at the threshold of quantum dot formation
V. A. Kul’bachinskii, R. A. Lunin, V. A. Rogozin, V. G. Mokerov, Yu. V. Fedorov, Yu. V. Khabarov, E. Narumi, K. Kindo, A. de Visser
Investigation of electronic transitions in coupled-quantum-well structures with a built-in electric field by photoreflectance spectroscopy
G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, V. A. Kul’bachinskii
Influence of charged defects on detection of electron spin resonance in vitreous chalcogenide semiconductors
L. P. Ginzburg
Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation
O. V. Naumova, I. V. Antonova, V. P. Popov, V. F. Stas’
Structural-phase transformations in SiOx films in the course of vacuum heat treatment
I. P. Lisovskyy, I. Z. Indutnyy, B. N. Gnennyy, P. M. Lytvyn, D. O. Mazunov, A. S. Oberemok, N. V. Sopinskyy, P. E. Shepelyavyi
The influence of hydrogen plasma on the electroreflectance spectrum and the spectrum of electron states of porous silicon
E. F. Venger, R. Yu. Holiney, L. A. Matveeva, A. V. Vasin
Optical properties of polydimethylphenyleneoxide free-standing films containing fullerene
Yu. F. Biryulin, E. Yu. Melenevskaya, S. N. Mikov, S. E. Orlov, V. D. Petrikov, D. A. Syckmanov, V. N. Zgonnik
Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold
N. Yu. Gordeev, S. V. Zaitsev, L. Ya. Karachinsky, V. I. Kopchatov, I. I. Novikov, V. M. Ustinov, P. S. Kop’ev
Tunneling recombination in silicon avalanche diodes
S. V. Bulyarskii, V. K. Ionychev, V. V. Kuz’min