Ausgabe 1/2008
Inhalt (16 Artikel)
Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, O. P. Pchelyakov, L. V. Sokolov
The linear stage of evolution of electron-hole avalanches in semiconductors
A. S. Kyuregyan
Optical spectroscopy of free excitons in a CuInS2 chalcopyrite semiconductor compound
A. V. Mudryi, A. V. Ivanyukovich, M. V. Yakushev, R. Martin, A. Saad
Electrical properties of proton-irradiated CdSnAs2
V. N. Brudnyi, T. V. Vedernikova
Dependence of the band bending at the AgBr-AgI microcontact interface on the shape and size of the heterogeneous system
A. V. Khaneft, A. S. Poplavnoi, B. A. Sechkarev, L. V. Sotnikova
Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures
S. G. Dmitriev, Yu. V. Markin
Deep levels and electron transport in AlGaN/GaN heterostructures
I. V. Antonova, V. I. Polyakov, A. I. Rukavishnikov, V. G. Mansurov, K. S. Zhuravlev
Metal-to-semiconductor emission of hot electrons excited on catalytic reaction
V. F. Kharlamov, A. V. Kostin, M. V. Kubyshkina, F. V. Kharlamov
Radiative recombination channels in Si/Si1 − x Ge x nanostructures
Yu. A. Berashevich, A. S. Panfilenok, V. E. Borisenko
In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix
A. N. Semenov, O. G. Lyublinskaya, V. A. Solov’ev, B. Ya. Mel’tser, S. V. Ivanov
Limiting values of the quality factor of thermoelectric composites
A. A. Snarskii, M. I. Zhenirovskii, I. V. Bezsudnov
High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions
E. V. Kalinina, N. B. Strokan, A. M. Ivanov, A. A. Sitnikova, A. V. Sadokhin, A. Yu. Azarov, V. G. Kossov, R. R. Yafaev
Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes
E. I. Goldman, A. G. Zhdan, N. F. Kukharskaya, M. V. Chernyaev
The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors
L. D. Moldavskaya, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov, V. I. Shashkin
Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m)
A. V. Lyutetskiĭ, K. S. Borshchev, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov
Injection-based photodetectors
I. M. Vikulin, Sh. D. Kurmashev, V. I. Stafeev