Ausgabe 1/2015
Inhalt (27 Artikel)
Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium
D. A. Pavlov, N. V. Bidus, A. I. Bobrov, O. V. Vikhrova, E. I. Volkova, B. N. Zvonkov, N. V. Malekhonova, D. S. Sorokin
Optical lattices of excitons in InGaN/GaN quantum well systems
V. V. Chaldyshev, A. S. Bolshakov, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsulnikov, M. A. Yagovkina
Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer
N. V. Dikareva, O. V. Vikhrova, B. N. Zvonkov, N. V. Malekhonova, S. M. Nekorkin, A. V. Pirogov, D. A. Pavlov
Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, N. A. Bekin, A. N. Yablonskiy, P. A. Yunin, S. G. Pavlov, N. V. Abrosimov, H. -W. Hübers, H. H. Radamson, V. N. Shastin
Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates
Yu. N. Drozdov, M. N. Drozdov, P. A. Yunin, D. V. Yurasov, M. A. Shaleev, A. V. Novikov
Excitation of plasmonic terahertz photovoltaic effects in a periodic two-dimensional electron system by the attenuated total reflection method
D. V. Fateev, K. V. Mashinsky, T. Yu. Bagaeva, V. V. Popov
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
D. A. Firsov, L. E. Vorobjev, V. Yu. Panevin, A. N. Sofronov, R. M. Balagula, I. S. Makhov, D. V. Kozlov, A. P. Vasil’ev
Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots
V. A. Gaisler, A. V. Gaisler, A. S. Jaroshevich, I. A. Derebezov, M. M. Kachanova, Yu. A. Zhivodkov, T. A. Gavrilova, A. S. Medvedev, L. A. Nenasheva, K. V. Grachev, V. K. Sandyrev, A. S. Kozhuhov, V. M. Shayahmetov, A. K. Kalagin, A. K. Bakarov, D. V. Dmitriev, A. I. Toropov, D. V. Shcheglov, A. V. Latyshev, A. L. Aseev
Energy spectrum and transport in narrow HgTe quantum wells
A. V. Germanenko, G. M. Minkov, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretsky, N. N. Mikhailov
Dipolar excitons indirect in real and momentum space in a GaAs/AlAs heterostructure
A. V. Gorbunov, V. B. Timofeev
Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers
S. V. Khazanova, V. E. Degtyarev, S. V. Tikhov, N. V. Baidus
Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells
S. V. Khazanova, V. E. Degtyarev, N. V. Malekhonova, D. A. Pavlov, N. V. Baidus
Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth
M. V. Knyazeva, A. G. Nastovjak, I. G. Neizvestny, N. L. Shwartz
Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation
A. S. Puzanov, S. V. Obolenskii, V. A. Kozlov
Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters
V. A. Kukushkin
Spin coherence of the two-dimensional electron gas in a GaAs quantum well
A. V. Larionov
Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning
N. A. Maleev, S. A. Blokhin, M. A. Bobrov, A. G. Kuzmenkov, A. A. Blokhin, P. Moser, J. A. Lott, D. Bimberg, V. M. Ustinov
Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures
A. N. Alexeev, D. M. Krasovitsky, S. I. Petrov, V. P. Chaly, V. V. Mamaev, V. G. Sidorov
Epitaxial growth of hexagonal silicon polytypes on sapphire
D. A. Pavlov, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov
Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn
S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, A. V. Nezhdanov, I. I. Chunin, P. A. Yunin
Ultra-broadband near-field antenna for terahertz plasmonic applications
O. V. Polischuk, V. V. Popov, W. Knap
Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition
B. N. Zvonkov, O. V. Vikhrova, M. V. Dorokhin, I. L. Kalentyeva, S. V. Morozov, D. I. Kryzhkov, P. A. Yunin
Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling
V. Ya. Aleshkin, S. V. Morozov, V. V. Rumyantsev, I. V. Tuzov
Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell
Yu. Yu. Romanova, E. P. Dodin, Yu. N. Nozdrin, A. A. Biryukov, N. V. Baidus, D. A. Pavlov, N. V. Malekhonova
Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy
Yu. G. Sadofyev, V. P. Martovitsky, M. A. Bazalevsky, A. V. Klekovkin, D. V. Averyanov, I. S. Vasil’evskii
Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy
P. E. Teterin, D. V. Averyanov, Yu. G. Sadofyev, O. E. Parfenov, I. A. Likhachev, V. G. Storchak
Characteristics of fullerene-based diode structures on polymer and glass substrates
V. V. Travkin, G. L. Pakhomov, M. N. Drozdov, S. A. Korolev, A. I. Mashin, A. A. Logunov