Ausgabe 10/2005
Inhalt (22 Artikel)
Thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe, and MnHgTe alloys
V. G. Deibuk, S. G. Dremlyuzhenko, S. É. Ostapov
Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1−x Six
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek
Features of physical differentiation with respect to light absorbance in junction photovoltage spectra
L. I. Berezhinskii, E. F. Venger, I. E. Matyash, A. V. Sachenko, B. K. Serdega
Mechanism of radiative recombination in the region of interband transitions in Si-Ge solid solutions
A. M. Emel’yanov, N. A. Sobolev, T. M. Mel’nikova, N. V. Abrosimov
Magnetism of III–V crystals doped with rare-earth elements
N. T. Bagraev, V. V. Romanov
Study of certain properties of Si-Si1−x Gex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy
B. Sapaev, A. S. Saidov
Formation of potential barriers in undoped disordered semiconductors
N. V. Vishnyakov, S. P. Vikhrov, V. G. Mishustin, A. P. Avachev, I. G. Utochkin, A. A. Popov
Stabilization of charge at the interface between the buried insulator and silicon in silicon-on-insulator structures
I. V. Antonova
Radiative recombination in GaN nanocrystals at high intensities of optical excitation
A. N. Gruzintsev, A. N. Red’kin, C. Barthou
Spin splitting of the X-valley donor impurity states in AlAs barriers and the spatial distribution of the probability density of their wave functions
E. E. Vdovin, Yu. N. Khanin
Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films
E. B. Gorokhov, V. A. Volodin, D. V. Marin, D. A. Orekhov, A. G. Cherkov, A. K. Gutakovskii, V. A. Shvets, A. G. Borisov, M. D. Efremov
Electronic structure and spectral properties of Si46 and Na8Si46 clathrates
S. I. Kurganskii, N. A. Borshch, N. S. Pereslavtseva
Terahertz electroluminescence originating from spatially indirect intersubband transitions in a GaAs/AlGaAs quantum-cascade structure
G. F. Glinskii, A. V. Andrianov, O. M. Sreseli, N. N. Zinov’ev
Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers
N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, M. V. Maksimov, E. S. Semenova, A. P. Vasil’ev, A. E. Zhukov, N. N. Ledentsov, V. M. Ustinov, D. Bimberg
Study of the properties of a two-dimensional electron gas in p −-3C-SiC/n +-6H-SiC heterostructures at low temperatures
A. A. Lebedev, D. K. Nel’son, B. S. Razbirin, I. I. Saidashev, A. N. Kuznetsov, A. E. Cherenkov
Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
V. A. Dan’ko, I. Z. Indutnyi, V. S. Lysenko, I. Yu. Maidanchuk, V. I. Min’ko, A. N. Nazarov, A. S. Tkachenko, P. E. Shepelyavyi
A quasi-hydrodynamic modification of the uniform-channel approximation in MOS-transistor theory
V. A. Gergel’, M. N. Yakupov
Temperature dependence of the threshold current of QW lasers
N. L. Bazhenov, K. D. Mynbaev, V. I. Ivanov-Omskii, V. A. Smirnov, V. P. Evtikhiev, N. A. Pikhtin, M. G. Rastegaeva, A. L. Stankevich, I. S. Tarasov, A. S. Shkol’nik, G. G. Zegrya
Mid-and far-IR focal plane arrays based on Hg1−x CdxTe photodiodes
V. I. Stafeev, K. O. Boltar’, I. D. Burlakov, V. M. Akimov, E. A. Klimanov, L. D. Saginov, V. N. Solyakov, N. G. Mansvetov, V. P. Ponomarenko, A. A. Timofeev, A. M. Filachev
Structural mechanisms of optimization of the photoelectric properties of CdS/CdTe thin-film heterostructures
G. S. Khrypunov
Electroluminescent properties of strained p-Si LEDs
N. A. Sobolev, A. M. Emel’yanov, E. I. Shek, O. V. Feklisova, E. B. Yakimov