Ausgabe 10/2006
Inhalt (21 Artikel)
Calculation of the size-distribution function for quantum dots at the kinetic stage of growth
V. G. Dubrovskiĭ
Correlation dependences in infrared spectra of metal phthalocyanines
A. V. Ziminov, S. M. Ramsh, E. I. Terukov, I. N. Trapeznikova, V. V. Shamanin, T. A. Yurre
Fabrication and microwavemicrowave photoconductivity of CdSe semiconductor films
Yu. V. Meteleva, G. F. Novikov
Two series of “dislocation” photoluminescence bands in cadmium telluride crystals
N. I. Tarbaev, G. A. Shepel’skii
Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses
N. A. Poklonskiĭ, N. M. Lapchuk, A. O. Korobko
Investigation of the effect of oxygen on the cathodoluminescence spectra and band gap of the ZnSxSe1-x alloy
N. K. Morozova, I. A. Karetnikov, D. A. Mideros, E. M. Gavrishchuk, V. B. Ikonnikov
Optical study of resonant states in GaN x As1−x
A. A. Gutkin, P. N. Brunkov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. N. Bert, S. G. Konnikov, M. Hopkinson, A. Patané, L. Eaves
Effect of the levels of intrinsic defects in the CdP2 band gap on electrical characteristics of corresponding structures with the Schottky barrier
I. G. Stamov, D. V. Tkachenko
The mechanism of current flow in an alloyed In-GaN ohmic contact
T. V. Blank, Yu. A. Gol’dberg, O. V. Konstantinov, V. G. Nikitin, E. A. Posse
Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface
E. I. Gol’dman
Temperature dependence of photoluminescence of CdS nanoclusters formed in the Langmuir-Blodgett film matrix
E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova
Photoluminescence of erbium ions in heterostructures with silicon nanocrystals
D. M. Zhigunov, O. A. Shalygina, S. A. Teterukov, V. Yu. Timoshenko, P. K. Kashkarov, M. Zacharias
Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition
I. V. Antonova, M. B. Gulyaev, Z. Sh. Yanovitskaya, V. A. Volodin, D. V. Marin, M. D. Efremov, Y. Goldstein, J. Jedrzejewski
Nondiffusive weak localization in two-dimensional systems with spin-orbit splitting of the spectrum
M. M. Glazov, L. E. Golub
Influence of holmium impurities on photoelectric properties of As2Se3 and (As2S3)0.3(As2Se3)0.7
I. I. Burdiyan, E. A. Senokosov, V. V. Kosyuk, R. A. Pynzar’
Oxidative-gravimetric porosimetry of macroporous silicon
A. A. Nechitaĭlov, E. V. Astrova, Yu. A. Kukushkina, S. Yu. Kameneva
Effect of extreme radiation fluences on parameters of SiC nuclear particle detectors
A. M. Ivanov, A. A. Lebedev, N. B. Strokan
Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs
S. A. Blokhin, A. V. Sakharov, N. A. Maleev, A. G. Kuz’menkov, I. I. Novikov, N. Yu. Gordeev, Yu. M. Shernyakov, M. V. Maximov, V. M. Ustinov, A. R. Kovsh, S. Mikhrin, N. N. Ledentsov, G. Lee, J. Y. Chi
The Wannier-Stark effects in the 6H-SiC planar junction field-effect transistors with a p-n junction as the gate
V. I. Sankin, P. P. Shkrebiĭ, A. A. Lebedev
High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide
V. P. Khvostikov, M. G. Rastegaeva, O. A. Khvostikova, S. V. Sorokina, A. V. Malevskaya, M. Z. Shvarts, A. N. Andreev, D. V. Davydov, V. M. Andreev