Ausgabe 10/2018
Inhalt (21 Artikel)
Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions
R. M. Sardarli, A. P. Abdullayev, N. A. Aliyeva, F. T. Salmanov, M. Y. Yusifov, A. A. Orudjeva
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering
M. M. Mezdrogina, A. Ja. Vinogradov, Yu. V. Kozhanova
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering
I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, G. P. Yablonskii, V. Y. Shiripov, E. A. Khokhlov, A. V. Mudryi, V. D. Zhivulko, O. M. Borodavchenko, M. V. Yakushev
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, V. N. Nevedomskiy, L. A. Sokura, S. S. Rouvimov, M. Z. Shvarts, A. E. Zhukov
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( = 15.5 mol %)
Yu. K. Undalov, E. I. Terukov, I. N. Trapeznikova
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method
A. V. Belolipetskiy, M. O. Nestoklon, I. N. Yassievich
Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier
N. A. Torkhov
Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs
V. V. Volkov, L. M. Kogan, A. N. Turkin, A. E. Yunovich
Analysis of the Features of Hot-Carrier Degradation in FinFETs
A. A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures
E. A. Grebenshchikova, Kh. M. Salikhov, V. G. Sidorov, V. A. Shutaev, Yu. P. Yakovlev
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, T. P. Samsonova
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
M. V. Maximov, A. M. Nadtochiy, Yu. M. Shernyakov, A. S. Payusov, A. P. Vasil’ev, V. M. Ustinov, A. A. Serin, N. Yu. Gordeev, A. E. Zhukov
Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals
S. A. Nemov, V. D. Andreeva, Yu. V. Ulashkevich, A. V. Povolotsky, A. A. Allahkhah
On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties
I. V. Bodnar, S. A. Detkov, Yu. V. Kasyuk, Yu. A. Fedotova
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films
A. P. Ryaguzov, R. R. Nemkayeva, N. R. Guseinov
Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties
L. N. Maskaeva, E. A. Fedorova, V. F. Markov, M. V. Kuznetsov, O. A. Lipina, A. V. Pozdin
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide
V. P. Popov, V. A. Antonov, V. I. Vdovin
Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films
L. K. Markov, A. S. Pavluchenko, I. P. Smirnova, S. I. Pavlov
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
W. V. Lundin, A. F. Tsatsulnikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, V. P. Evtikhiev
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions
L. B. Karlina, A. S. Vlasov, I. P. Soshnikov, I. P. Smirnova, B. Ya. Ber, A. B. Smirnov