Ausgabe 11/2010
Inhalt (29 Artikel)
Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states
D. A. Firsov, V. A. Shalygin, V. Yu. Panevin, G. A. Melentyev, A. N. Sofronov, L. E. Vorobjev, A. V. Andrianov, A. O. Zakhar’in, V. S. Mikhrin, A. P. Vasil’ev, A. E. Zhukov, L. V. Gavrilenko, V. I. Gavrilenko, A. V. Antonov, V. Ya. Aleshkin
Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors
M. M. Prokof’eva, M. V. Dorokhin, Yu. A. Danilov, A. V. Kudrin, O. V. Vikhrova
Carrier heating in quantum wells under optical and current injection of electron-hole pairs
L. E. Vorobjev, M. Ya. Vinnichenko, D. A. Firsov, V. L. Zerova, V. Yu. Panevin, A. N. Sofronov, P. Thumrongsilapa, V. M. Ustinov, A. E. Zhukov, A. P. Vasiljev, L. Shterengas, G. Kipshidze, T. Hosoda, G. Belenky
Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel
D. V. Fateev, V. V. Popov, M. S. Shur
Resonance structure of the rate of Auger recombination in silicon nanocrystals
N. V. Kurova, V. A. Burdov
Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals
V. A. Belyakov, A. A. Konakov, V. A. Burdov
Single-mode vertical-cavity surface emitting lasers for 87Rb-based chip-scale atomic clock
I. A. Derebezov, V. A. Haisler, A. K. Bakarov, A. K. Kalagin, A. I. Toropov, M. M. Kachanova, T. A. Gavrilova, O. I. Semenova, D. B. Tretyakov, I. I. Beterov, V. M. Entin, I. I. Ryabtsev
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons
E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Gol’tsman, A. A. Verevkin, A. I. Toropov
Low-field anomaly of the hall effect in disordered two-dimensional systems
A. V. Germanenko, G. M. Minkov, O. E. Rut, I. V. Soldatov, A. A. Sherstobitov
In situ optical diagnostics of growing surfaces in the process of nanoheterostructure fabrication
I. P. Kazakov, E. V. Glazyrin, S. A. Savinov, V. I. Tsekhosh, S. S. Shmelev
Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation
S. A. Akhlestina, V. K. Vasil’ev, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, S. M. Nekorkin
Formation and “white” photoluminescence of nanoclusters in SiO x films implanted with carbon ions
A. I. Belov, A. N. Mikhaylov, D. E. Nikolitchev, A. V. Boryakov, A. P. Sidorin, A. P. Gratchev, A. V. Ershov, D. I. Tetelbaum
Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region
A. V. Antonov, N. V. Vostokov, M. N. Drozdov, L. D. Moldavskaya, V. I. Shashkin, O. I. Khrykin, A. N. Yablonskiy
High-resolution emission spectra of pulsed terahertz quantum-cascade lasers
A. V. Ikonnikov, A. V. Antonov, A. A. Lastovkin, V. I. Gavrilenko, Yu. G. Sadof’ev, N. Samal
Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures
A. N. Yablonskiy, B. A. Andreev, L. V. Krasilnikova, D. I. Kryzhkov, V. P. Kuznetsov, Z. F. Krasilnik
Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions
S. V. Morozov, K. V. Marem’yanin, I. V. Erofeeva, A. N. Yablonskiy, A. V. Antonov, L. V. Gavrilenko, V. V. Rumyantsev, V. I. Gavrilenko
Special features of the excitation spectra and kinetics of photoluminescence of the Si1 − x Ge x :Er/Si structures with relaxed heterolayers
L. V. Krasilnikova, A. N. Yablonskiy, M. V. Stepikhova, Yu. N. Drozdov, V. G. Shengurov, Z. F. Krasilnik
Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p +/n +/n-Si:Er
V. B. Shmagin, V. P. Kuznetsov, K. E. Kudryavtsev, S. V. Obolensky, V. A. Kozlov, Z. F. Krasil’nik
The cyclotron resonance of holes in InGaAs/GaAs heterostructures with quantum wells in quantizing magnetic fields
A. V. Ikonnikov, K. E. Spirin, V. I. Gavrilenko, D. V. Kozlov, O. Drachenko, H. Schneider, M. Helm
Lateral transport and far-infrared radiation of electrons in In x Ga1 − x As/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field
N. V. Baidus, P. A. Belevskii, A. A. Biriukov, V. V. Vainberg, M. N. Vinoslavskii, A. V. Ikonnikov, B. N. Zvonkov, A. S. Pylypchuk, V. N. Poroshin
Tunneling electron transport through heterobarriers with nanometer heterogeneities
V. A. Kozlov, V. A. Verbus
Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands
A. I. Mashin, A. V. Nezhdanov, D. O. Filatov, M. A. Isakov, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov
The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells
Yu. B. Vasilyev, F. Gouider, G. Nachtwei, P. D. Buckle
Dynamic electron tunneling through the quantum dot under conditions of Coulomb blockade
S. M. Kashin, A. M. Satanin
Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells
N. A. Kalyuzhnyy, A. S. Gudovskikh, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, V. M. Andreev
Dynamic current localization during turn-off of high-power microgate bipolar switches
A. V. Gorbatyuk, I. V. Grekhov, D. V. Gusin