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Semiconductors

Ausgabe 11/2016

Inhalt (26 Artikel)

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravleuv, I. P. Soshnikov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

R. M. Balagula, M. Ya. Vinnichenko, I. S. Makhov, D. A. Firsov, L. E. Vorobjev

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsulnikov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

A. N. Yablonsky, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus’, Z. F. Krasil’nik

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov, S. A. Kraev, E. A. Surovegina, V. I. Shashkin, P. A. Yunin

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, Yu. V. Usov, D. E. Nikolichev, R. N. Kryukov, S. Yu. Zubkov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Germanium laser with a hybrid surface plasmon mode

A. A. Dubinov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

On the crystal structure and thermoelectric properties of thin Si1–x Mn x films

I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, A. V. Zdoroveishchev, A. V. Kudrin, D. A. Pavlov, U. V. Usov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Anharmonic Bloch oscillations of electrons in electrically biased superlattices

K. A. Ivanov, E. I. Girshova, M. A. Kaliteevski, S. J. Clark, A. J. Gallant

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn

I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. N. Drozdov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

V. B. Shmagin, S. N. Vdovichev, E. E. Morozova, A. V. Novikov, M. V. Shaleev, D. V. Shengurov, Z. F. Krasilnik

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films

A. E. Klimov, V. S. Epov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser

N. V. Baydus, S. M. Nekorkin, D. A. Kolpakov, A. V. Ershov, V. Ya. Aleshkin, A. A. Dubinov, A. A. Afonenko

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

V. T. Shamirzaev, V. A. Gaisler, T. S. Shamirzaev

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

A. N. Kosarev, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

On the condensation of exciton polaritons in microcavities induced by a magnetic field

V. P. Kochereshko, D. V. Avdoshina, P. Savvidis, S. I. Tsintzos, Z. Hatzopoulos, A. V. Kavokin, L. Besombes, H. Mariette

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorohodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Dynamic generation of spin-wave currents in hybrid structures

I. I. Lyapilin, M. S. Okorokov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

A. M. Mozharov, D. A. Kudryashov, A. D. Bolshakov, G. E. Cirlin, A. S. Gudovskikh, I. S. Mukhin

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

D. G. Pavelyev, A. P. Vasilev, V. A. Kozlov, Yu. I. Koschurinov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Magnetospectroscopy of double HgTe/CdHgTe quantum wells

L. S. Bovkun, S. S. Krishtopenko, A. V. Ikonnikov, V. Ya. Aleshkin, A. M. Kadykov, S. Ruffenach, C. Consejo, F. Teppe, W. Knap, M. Orlita, B. Piot, M. Potemski, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Study of the structures of cleaved cross sections by Raman spectroscopy

S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, N. Yu. Konnova, A. V. Nezhdanov, I. Yu. Pashenkin

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Wide-aperture total absorption of a terahertz wave in a nanoperiodic graphene-based plasmon structure

O. V. Polischuk, V. S. Melnikova, V. V. Popov

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Investigation of the thermal stability of metastable GeSn epitaxial layers

V. P. Martovitsky, Yu. G. Sadofyev, A. V. Klekovkin, V. V. Saraikin, I. S. Vasil’evskii

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

N. V. Baidus, V. A. Kukushkin, B. N. Zvonkov, S. M. Nekorkin

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