Ausgabe 12/2008
Inhalt (14 Artikel)
Study of the intermediate layer at the n +-CdS/p-CdTe interface
S. A. Muzafarova, B. U. Aitbaev, Sh. A. Mirsagatov, K. Durshimbetov, Zh. Zhanabergenov
Energy spectrum of charge carriers in Ag2Te
S. A. Aliyev, Z. F. Agayev, R. I. Selimzadeh
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)
N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii
Subterahertz self-oscillations in ultrafast self-modulation of optical absorption in GaAs
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov
Type II broken-gap GaSb1 − x Asx/InAs heterojunction (x < 0.15): Evolution of the band diagram for the ternary solid solution
V. V. Romanov, K. D. Moiseev, T. I. Voronina, T. S. Lagunova, Yu. P. Yakovlev
Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype
V. I. Sankin, P. P. Shkrebiy
Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching
M. Pociask, I. I. Izhnin, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin, K. D. Mynbaev, V. I. Ivanov-Omskii
Surface states on the n-InN-electrolyte interface
A. A. Gutkin, M. É. Rudinsky, P. N. Brunkov, A. A. Klochikhin, V. Yu. Davydov, H. -Y. Chen, S. Gwo
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy
V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. V. Sakharov, A. A. Sitnikova, P. S. Kop’ev, S. V. Ivanov, E. V. Lutsenko, A. V. Danilchyk, N. V. Rzheutskii, G. P. Yablonskii
The binding energy of excitons and X + and X − trions in one-dimensional systems
M. A. Semina, R. A. Sergeev, R. A. Suris
Radiation hardness of SiC subjected to alternating irradiation and annealing
A. M. Ivanov, N. B. Strokan, A. A. Lebedev
An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures
M. M. Zverev, N. A. Gamov, D. V. Peregoudov, V. B. Studionov, E. V. Zdanova, I. V. Sedova, S. V. Gronin, S. V. Sorokin, S. V. Ivanov, P. S. Kop’ev
Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces
Yu. B. Samsonenko, G. É. Cirlin, V. A. Egorov, N. K. Polyakov, V. P. Ulin, V. G. Dubrovskii
Growth of 4H-polytype silicon carbide ingots on (100) seeds
D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov