Ausgabe 12/2009
Inhalt (8 Artikel)
Semiconductor nanowhiskers: Synthesis, properties, and applications
V. G. Dubrovskii, G. E. Cirlin, V. M. Ustinov
Nernst-ettingshausen tensor in Sb2Te3 single crystal
S. A. Nemov, G. L. Tarantasov, V. I. Proshin, M. K. Zhitinskaya, L. D. Ivanova, Yu. V. Granatkina
Interaction of electrons with optical phonons localized in a quantum well
J. Požela, K. Požela, V. Jucienė, A. Sužiedėlis, A. S. Shkolnik, S. S. Mikhrin, V. S. Mikhrin
Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers
A. V. Savelyev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, A. E. Zhukov
High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures
A. V. Lyutetskiy, N. A. Pikhtin, N. V. Fetisova, A. Yu. Leshko, S. O. Slipchenko, Z. N. Sokolova, Yu. A. Ryaboshtan, A. A. Marmalyuk, I. S. Tarasov
Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire
Kh. Sh-o. Kaltaev, N. S. Sidel’nikova, S. V. Nizhankovskiy, A. Y. Dan’ko, M. A. Rom, P. V. Mateychenko, M. V. Dobrotvorskaya, A. T. Budnikov
Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions
P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov
GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process
V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin