Ausgabe 2/2002
Inhalt (25 Artikel)
Effect of dynamic aging of dislocations on the deformation behavior of extrinsic semiconductors
B. V. Petukhov
Electrical properties of silicon layers implanted with ytterbium ions
O. V. Aleksandrov, A. O. Zakhar’in, N. A. Sobolev
Effect of optical radiation on internal friction in piezoelectric semiconductors with deep-level centers
V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, N. P. Yaroslavtsev
“LO-Phonon” correlation between picosecond superluminescence spectrum and special features of absorption spectrum in GaAs for non-Fermi distribution of carriers induced by picosecond light pulse
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, S. V. Stegantsov
Linear photovoltaic effect in gyrotropic crystals
R. Ya. Rasulov, Yu. E. Salenko, D. Kambarov
Optical properties of fluorite in a wide energy range
V. V. Sobolev, A. I. Kalugin
Influence of laser pump density on the characteristic time constant and the intermediate-field electromodulation E 0 component of the photoreflectance signal
R. V. Kuz’menko, A. V. Ganzha, É. P. Domashevskaya, S. Hildenbrandt, J. Schreiber
Effect of ionization on the behavior of silicon in gallium arsenide subjected to electron-beam annealing
M. V. Ardyshev, V. M. Ardyshev
Annealing of deep boron centers in silicon carbide
V. S. Ballandovich, E. N. Mokhov
Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs
V. F. Kovalenko, M. B. Litvinova, S. V. Shutov
Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxy
V. B. Shmagin, B. A. Andreev, A. V. Antonov, Z. F. Krasil’nik, V. P. Kuznetsov, O. A. Kuznetsov, E. A. Uskova, C. A. J. Ammerlaan, G. Pensl
Optical absorption in (Pb0.78Sn0.22)1−X InXTe (X=0.001–0.005)
A. N. Veis
Distribution of charge carriers in dissipative semiconductor structures
I. K. Kamilov, A. A. Stepurenko, A. S. Kovalev
The effect of charge-carrier drift in the built-in quasi-electric field on the emission spectrum for graded-gap semiconductors
V. F. Kovalenko, A. Yu. Mironchenko, S. V. Shutov
Silicon surface treatment by pulsed nitrogen plasma
F. B. Baimbetov, B. M. Ibraev, A. M. Zhukeshov
Role of surface segregation in formation of abrupt interfaces in Si/Si1−x Gex heterocompositions grown by molecular-beam epitaxy with combined sources
L. K. Orlov, N. L. Ivina
Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures
S. G. Dmitriev, Yu. V. Markin
Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma
Yu. A. Bumai, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, V. Nakov, T. S. Cheng
Energy spectrum and optical properties of the quantum dot-impurity center complex
V. D. Krevchik, A. V. Levashov
Injection excitation of luminescence in multilayer nc-Si/insulator structures
Yu. A. Berashevich, B. V. Kamenev, V. E. Borisenko
Temperature dependence of the optical energy gap for the CdSxSe1−x quantum dots
V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, N. I. Malysh
The dicke superradiation in quantum heterostructures under optical pumping
A. I. Klimovskaya, E. G. Gule, Yu. A. Driga
Electroluminescence from AlGaAs/GaAs quantum-cascade structures in the terahertz range
N. N. Zinov’ev, A. V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, G. Hill, J. M. Chamberlain
Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic deposition
V. P. Afanas’ev, A. S. Gudovskikh, V. N. Nevedomskii, A. P. Sazanov, A. A. Sitnikova, I. N. Trapeznikova, E. I. Terukov
Optimal doping of the drift region in unipolar diodes and transistors
A. S. Kyuregyan