Ausgabe 2/2009
Inhalt (27 Artikel)
Spinodal decomposition of ZnO-BeO alloys
O. S. Emeljanova, S. S. Strelchenko, M. P. Usacheva
Nonuniformity of electrical properties for the PbTe single crystals in the growth direction
N. B. Mustafayev, G. Z. Bagiyeva, G. A. Ahmedova, Z. F. Agayev, D. Sh. Abdinov
Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides
V. L. Shaposhnikov, D. B. Migas, V. E. Borisenko, N. N. Dorozhkin
Conductivity anisotropy in the doped Bi2Te3 single crystals
N. A. Abdullaev, S. Sh. Kakhramanov, T. G. Kerimova, K. M. Mustafayeva, S. A. Nemov
Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se2
R. G. Veliyev, R. Z. Sadikhov, E. M. Kerimova, Yu. G. Asadov, A. I. Jabbarov
Conductivity of ultradispersed SnO2 ceramic in strong electric fields
R. B. Vasiliev, M. N. Rumyantseva, L. I. Ryabova, A. M. Gaskov
Terbium photoluminescence in yttrium aluminum garnet xerogels
G. K. Maliarevich, N. V. Gaponenko, A. V. Mudryi, Yu. N. Drozdov, M. V. Stepikhova, E. A. Stepanova
Absorption, luminescence excitation, and infrared transmittance spectra of ZnS(O)-ZnSe(O) crystals in the context of the band anticrossing theory
N. K. Morozova, D. A. Mideros, N. D. Danilevich
The nature of “heavy” electrons in the p-HgTe zero-gap semiconductor
M. I. Daunov, I. K. Kamilov, S. F. Gabibov
Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures
S. A. Muzafarova, S. A. Mirsagatov, F. N. Dzhamalov
Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron
V. G. Shengurov, V. Yu. Chalkov, D. V. Shengurov, S. A. Denisov
Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers
P. A. Ivanov, A. S. Potapov, T. P. Samsonova
Effect of ferroelectric substrate on the conductivity of the semiconductor film
M. M. Panakhov, A. A. Agasiev, S. N. Sarmasov
Properties of heterojunction based on pentacene and perylene derivatives
P. Y. Stakhira, V. V. Cherpak, D. Yu. Volynyuk
Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix
A. N. Gruzintsev, G. A. Emelchenko, V. M. Masalov, E. E. Yakimov, C. Barthou, A. Maitre
Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba’s spin-orbit coupling in a heterojunction with a lateral superlattice
A. A. Perov, L. V. Solnyshkova
Difference-frequency generation in a butt-join diode laser
B. N. Zvonkov, A. A. Biryukov, S. M. Nekorkin, V. Ya. Aleshkin, V. I. Gavrilenko, A. A. Dubinov, K. V. Maremyanin, S. V. Morozov
Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures
S. V. Zaitsev, D. R. Yakovlev, A. Waag
Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors
L. A. Golovan, S. V. Zabotnov, V. Yu. Timoshenko, P. K. Kashkarov
Evolution of the photoresponse time of the GaAs/AlGaAs cyclotron resonance quantum Hall effect detector
A. V. Antonov, V. I. Gavrilenko, D. I. Kuritsyn, S. V. Morozov, K. E. Spirin, Y. Kawaguchi, S. Komiyama
Transport in GaAs/Al x Ga1−x As superlattices with narrow minibands: Effects of interminiband tunneling
A. A. Andronov, E. P. Dodin, D. I. Zinchenko, Yu. N. Nozdrin
Transport in GaAs/Al x Ga1−x As superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations
A. A. Andronov, E. P. Dodin, D. I. Zinchenko, Yu. N. Nozdrin
Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field
A. A. Dobrovolsky, T. A. Komissarova, Z. M. Dashevsky, V. A. Kassiyan, B. A. Akimov, L. I. Ryabova, D. R. Khokhlov
Nonlinear response of a double-well nanostructure with electron-electron interaction
V. F. Elesin, I. Yu. Kateev, M. A. Remnev
Simulation of solar cells with quantum wells and comparison with conventional solar cells
A. V. Sachenko, I. O. Sokolovsky
As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus
A. V. Boitsov, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin