Ausgabe 2/2018
Inhalt (23 Artikel)
Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons
R. K. Yafarov
Conductivity of Ga2O3–GaAs Heterojunctions
V. M. Kalygina, I. L. Remizova, O. P. Tolbanov
Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime
M. A. Ormont, I. P. Zvyagin
Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals
S. N. Mustafaeva, S. M. Asadov, E. M. Kerimova
Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures
V. Kažukauskas, R. Garbačauskas, S. Savicki
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers
M. M. Sobolev, F. Yu. Soldatenkov
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range
Yu. V. Ulashkevich, V. V. Kaminskiy, M. V. Romanova, N. V. Sharenkova
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films
Kh. A. Abdullin, L. V. Gritsenko, S. E. Kumekov, A. A. Markhabaeva, E. I. Terukov
Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition
Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Soshnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping
D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil’evskii
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells
N. V. Pavlov, G. G. Zegrya, A. G. Zegrya, V. E. Bugrov
Optical Properties of Tellurium-Based Chalcogenide Alloys in the Far Infrared Region (λ > 30 μm)
V. A. Ryzhov, B. T. Melekh
Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates
A. V. Stanchik, V. F. Gremenok, S. A. Bashkirov, M. S. Tivanov, R. L. Juškénas, G. F. Novikov, R. Giraitis, A. M. Saad
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
V. V. Ratnikov, M. P. Sheglov, B. Ya. Ber, D. Yu. Kazantsev, I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev
On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal
S. Yu. Davydov
Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors
B. N. Miroshnikov, I. N. Miroshnikova, A. I. Popov
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC
M. N. Solovan, G. O. Andrushchak, A. I. Mostovyi, T. T. Kovaliuk, V. V. Brus, P. D. Maryanchuk
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures
S. E. Tyaginov, A. A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers
F. I. Zubov, M. V. Maximov, N. Yu. Gordeev, Yu. S. Polubavkina, A. E. Zhukov
Electrical Activity of Extended Defects in Multicrystalline Silicon
S. M. Pescherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, R. V. Presnyakov
Luminescence Properties of Cd x Zn1 – xO Thin Films
A. A. Lotin, O. A. Novodvorsky, L. S. Parshina, O. D. Khramova, E. A. Cherebylo, V. A. Mikhalevsky
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics
A. F. Shimanskii, T. O. Pavlyuk, S. A. Kopytkova, R. A. Filatov, A. N. Gorodishcheva
Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure
I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin