Ausgabe 2/2019
Inhalt (25 Artikel)
Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)
S. A. Karandashev, B. A. Matveev, M. A. Remennyi
Features of the Properties of Rare-Earth Semiconductors
V. V. Kaminski, N. V. Sharenkova
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. O. Parshin, N. S. Melesov, C. G. Simakin
Laser Annealing of Thin ITO Films on Flexible Organic Substrates
L. S. Parshina, O. A. Novodvorsky, O. D. Khramova, A. A. Lotin, M. D. Khomenko, P. A. Shchur
Structural, Optical, and Photosensitive Properties of PbS Films Deposited in the Presence of CaCl2
L. N. Maskaeva, E. V. Mostovshchikova, V. F. Markov, V. I. Voronin
Technique for the Formation of Antireflection Coatings Based on ITO Films
L. K. Markov, A. S. Pavluchenko, I. P. Smirnova
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers
S. A. Kukushkin, A. M. Mizerov, A. S. Grashchenko, A. V. Osipov, E. V. Nikitina, S. N. Timoshnev, A. D. Bouravlev, M. S. Sobolev
Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface
N. V. Bondar, M. S. Brodyn, N. A. Matveevskaya, T. G. Beynik
Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region
A. A. Bloshkin, A. I. Yakimov, A. V. Dvurechenskii
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance
N. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, M. M. Kulagina, Yu. A. Guseva, Yu. M. Shernyakov, Yu. M. Zadiranov, M. V. Maximov
Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light
L. S. Basalaeva, Yu. V. Nastaushev, F. N. Dultsev, N. V. Kryzhanovskaya, E. I. Moiseev
Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga2Se3) Structures
A. M. Pashayev, B. H. Tagiyev, O. B. Tagiyev, V. T. Majidova, I. Z. Sadikhov
Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides
A. P. Novitskii, I. A. Serhiienko, S. V. Novikov, K. V. Kuskov, D. V. Leybo, D. S. Pankratova, A. T. Burkov, V. V. Khovaylo
Thermoresistive Semiconductor SiC/Si Composite Material
S. K. Brantov, E. B. Yakimov
Optical Properties of Polyethylene Filled with Bi2Te3 Nanocrystallites
A. Yu. Gamzayeva, E. G. Alizade, N. T. Mamedov, N. A. Abdullayev, I. R. Amiraslanov, Y. N. Aliyeva, Kh. N. Akhmedova, G. H. Azhdarov, K. Sh. Kahramanov, S. A. Nemov
Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates
M. B. Shalimova, N. V. Sachuk
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent
E. A. Grebenshchikova, V. G. Sidorov, V. A. Shutaev, Yu. P. Yakovlev
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers
E. V. Erofeev, I. V. Fedin, V. V. Fedina, A. P. Fazleev
Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers
I. E. Tyschenko, I. V. Popov, E. V. Spesivtsev
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates
G. B. Galiev, E. A. Klimov, A. N. Klochkov, V. B. Kopylov, S. S. Pushkarev
Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering
S. V. Zaitsev, V. S. Vaschilin, V. V. Kolesnik, M. V. Limarenko, D. S. Prokhorenkov, E. I. Evtushenko
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method
R. V. Levin, V. N. Nevedomskyi, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnyi, M. N. Mizerov
Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves
N. A. Viglin, I. V. Gribov, V. M. Tsvelikhovskaya, E. I. Patrakov
Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile
D. S. Frolov, G. E. Yakovlev, V. I. Zubkov