Ausgabe 3/2014
Inhalt (25 Artikel)
Features of the dark conductivity of zinc selenide
V. Ya. Degoda, G. P. Podust
Magnetic susceptibility of Bi2 − x Sb x Te3 (0 < x ≤ 1) crystals in the intrinsic conductivity region
N. P. Stepanov, V. Yu. Nalivkin
Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu1 − x Zn x InS2 alloy
A. V. Novosad, V. V. Bozhko, H. E. Davydyuk, O. V. Parasyuk, O. R. Gerasymyk, N. Vainorius, A. Sakavichus, V. Janonis, V. Kazukauskas
Effect of annealing in liquid cadmium upon photoluminescence in polycrystalline cadmium telluride grown under nonequilibrium conditions
A. A. Pruchkina, N. S. Nikolaev, V. S. Krivobok, V. S. Bagaev, E. E. Onishchenko, Yu. V. Klevkov, S. A. Kolosov
Interface recombination velocity measurement in SiO2/Si
S. Ilahi, N. Yacoubi
Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface
M. S. Aksenov, N. A. Valisheva, T. A. Levtsova, O. E. Tereshchenko
On the field effect in thin films of semiconductors with Kane’s charge-carrier dispersion relation
I. S. Dubitskiy, A. M. Yafyasov
Electron-phonon interaction in short-period (GaAs) m (AlAs) n (001) superlattices
S. N. Grinyaev, L. N. Nikitina, V. G. Tyuterev
Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots
A. N. Reznitsky, A. A. Klochikhin, M. V. Eremenko
Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel
T. A. Komissarova, A. N. Semenov, B. Ya. Meltser, V. A. Solov’ev, P. Paturi, D. L. Fedorov, P. S. Kop’ev, S. V. Ivanov
Study of the electrical properties of individual (Ga,Mn)As nanowires
A. D. Bouravleuv, N. V. Sibirev, E. P. Gilstein, P. N. Brunkov, I. S. Mukhin, M. Tchernycheva, A. I. Khrebtov, Yu. B. Samsonenko, G. E. Cirlin
On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum
M. G. Mynbaeva, S. P. Lebedev, A. A. Lavrent’ev, K. D. Mynbaev, A. A. Golovatenko, A. A. Lebedev, V. I. Nikolaev
Photoelectric properties of an injection photodetector based on alloys of II–VI compounds
Sh. A. Mirsagatov, O. K. Ataboev, B. N. Zaveryukhin, Zh. T. Nazarov
On the application of thin films of silicon nanoparticles for increasing solar cell efficiency
S. G. Dorofeev, N. N. Kononov, V. M. Zverolovlev, K. V. Zinoviev, V. N. Sukhanov, N. M. Sukhanov, B. G. Gribov
Optimization of carrier mobility in luminescence layers based on europium β-diketonates in hybrid light-emitting structures
M. A. Bochkov, A. G. Vitukhnovsky, I. V. Taidakov, A. A. Vashchenko, A. V. Katsaba, S. A. Ambrozevich, P. N. Brunkov
Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
V. V. Shamakhov, D. N. Nikolaev, A. V. Lyutetskiy, K. V. Bakhvalov, M. G. Rastegaeva, S. O. Slipchenko, N. A. Pikhtin, I. S. Tarasov
Organic light-emitting devices with multi-shell quantum dots connected with polythiophene derivatives
A. A. Vashchenko, A. G. Vitukhnovsky, I. V. Taidakov, P. N. Tananaev, V. A. Vasnev, E. N. Rodlovskaya, D. N. Bychkovsky
Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation
D. A. Kudryashov, A. S. Gudovskikh, E. V. Nikitina, A. Yu. Egorov
Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate
K. Yu. Osipov, L. E. Velikovskiy, V. A. Kagadei
Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
A. A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov
Formation of two-layer composite-on-insulator structures based on porous silicon and SnO x . Study of their electrical and gas-sensing properties
V. V. Bolotov, V. E. Roslikov, E. A. Roslikova, K. E. Ivlev, E. V. Knyazev, N. A. Davletkildeev
Si1 − x Ge x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates
S. A. Denisov, S. A. Matveev, V. Yu. Chalkov, V. G. Shengurov, Yu. N. Drozdov, M. V. Stepikhova, D. V. Shengurov, Z. F. Krasilnik
Effect of features of the technology of polycrystalline CdTe growth on the conductivity and deep level spectrum after annealing
E. A. Bobrova, Yu. V. Klevkov, S. G. Chernook, N. N. Senturina
Doping of silicon with selenium by diffusion from the gas phase
Yu. A. Astrov, V. B. Shuman, L. M. Portsel, A. N. Lodygin