Ausgabe 3/2017
Inhalt (26 Artikel)
Single crystals of (FeIn2S4) x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion
I. V. Bodnar, M. A. Zhafar, Yu. V. Kasyuk, Yu. A. Fedotova
Crystal defects in solar cells produced by the method of thermomigration
V. N. Lozovskii, A. A. Lomov, L. S. Lunin, B. M. Seredin, Yu. M. Chesnokov
Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength
V. F. Bannaya
Atomic configuration and charge state of hydrogen at dislocations in silicon
N. V. Vysotskii, A. S. Loshachenko, O. F. Vyvenko
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers
V. V. Kozlovski, A. A. Lebedev, A. M. Strel’chuk, K. S. Davidovskaya, A. E. Vasil’ev, L. F. Makarenko
Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
N. I. Klyui, V. B. Lozinskii, A. I. Liptuga, V. N. Dikusha, A. P. Oksanych, M. G. Kogdas’, A. L. Perekhrest, S. E. Pritchin
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
G. B. Galiev, M. M. Grekhov, G. Kh. Kitaeva, E. A. Klimov, A. N. Klochkov, O. S. Kolentsova, V. V. Kornienko, K. A. Kuznetsov, P. P. Maltsev, S. S. Pushkarev
Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals
S. A. Nemov, Yu. V. Ulashkevich
Radiative d–d transitions at tungsten centers in II–VI semiconductors
V. V. Ushakov, V. S. Krivobok, A. A. Pruchkina
On the size and temperature dependence of the energy gap in cadmium-selenide quantum dots embedded in fluorophosphate glasses
Zh. O. Lipatova, E. V. Kolobkova, A. N. Babkina, N. V. Nikonorov
Valence-band offsets in strained SiGeSn/Si layers with different tin contents
A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov
Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition
V. R. Kopach, K. S. Klepikova, N. P. Klochko, G. S. Khrypunov, V. E. Korsun, V. M. Lyubov, M. V. Kirichenko, A. V. Kopach
Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions
H. P. Parkhomenko, M. N. Solovan, A. I. Mostovyi, K. S. Ulyanytsky, P. D. Maryanchuk
Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO x /insulator structures from the results of synchrotron investigations
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, E. P. Domashevskaya
Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics
N. Yu. Kirsanov, N. V. Latukhina, D. A. Lizunkova, G. A. Rogozhina, M. V. Stepikhova
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, S. S. Rouvimov, A. E. Zhukov
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field
R. M. Balagula, M. Ya. Vinnichenko, I. S. Makhov, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev
Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure
R. A. Aliev, G. M. Gajiev, M. M. Gadzhialiev, A. M. Ismailov, Z. Sh. Pirmagomedov
A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum
V. K. Ionychev, A. A. Shesterkina
Current–voltage characteristics of high-voltage 4H-SiC p +–n 0–n + diodes in the avalanche breakdown mode
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov
AlN/GaN heterostructures for normally-off transistors
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin
Pulsed laser deposition of Al x Ga1–x As and GaP thin films onto Si substrates for photoelectric converters
L. S. Lunin, M. L. Lunina, O. V. Devitsky, I. A. Sysoev
Properties of ZnO:Er3+ films obtained by the sol–gel method
V. V. Malyutina-Bronskaya, A. V. Semchenko, V. V. Sidsky, V. E. Fedorov
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types
S. A. Kukushkin, A. V. Osipov, A. V. Red’kov
Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures
A. V. Pavlikov, N. V. Latukhina, V. I. Chepurnov, V. Yu. Timoshenko
Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator
L. S. Parshina, O. D. Khramova, O. A. Novodvorsky, A. A. Lotin, I. A. Petukhov, F. N. Putilin, K. D. Shcherbachev